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公开(公告)号：US11385552B2
公开(公告)日：2022-07-12
申请号：US17039308
申请日：2020-09-30
Applicant: ASML Netherlands B.V.
Inventor： Martin Jacobus Johan Jak , Kaustuve Bhattacharyya
IPC: H01L23/544 , G03F7/20 , G03F9/00 , H01L21/027
Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.
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公开(公告)号：US20210325174A1
公开(公告)日：2021-10-21
申请号：US17314469
申请日：2021-05-07
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Vasco Tomas Tenner , Arie Jeffrey Den Boef , Hugo Augustinus Joseph Cramer , Patrick Warnaar , Grzegorz Grzela , Martin Jacobus Johan Jak
Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.
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3.发明授权公开(公告)号：US10656534B2
公开(公告)日：2020-05-19
申请号：US16428215
申请日：2019-05-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh Pandey , Jin Lian , Samee Ur-Rehman , Martin Jacobus Johan Jak
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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公开(公告)号：US10379445B2
公开(公告)日：2019-08-13
申请号：US16174398
申请日：2018-10-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Martin Jacobus Johan Jak , Arie Jeffrey Den Boef , Martin Ebert
IPC: G03B27/54 , G03F7/20 , G01B11/26 , G01N21/95 , G01N21/21 , G01N21/47 , G02B5/18 , G03F9/00 , G02B27/42
Abstract: A method, involving illuminating at least a first periodic structure of a metrology target with a first radiation beam having a first polarization, illuminating at least a second periodic structure of the metrology target with a second radiation beam having a second different polarization, combining radiation diffracted from the first periodic structure with radiation diffracted from the second periodic structure to cause interference, detecting the combined radiation using a detector, and determining a parameter of interest from the detected combined radiation.
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公开(公告)号：US10042268B2
公开(公告)日：2018-08-07
申请号：US15038535
申请日：2014-11-04
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Arie Jeffrey Den Boef , Omer Abubaker Omer Adam , Martin Jacobus Johan Jak
Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180088347A1
公开(公告)日：2018-03-29
申请号：US15694398
申请日：2017-09-01
Applicant: ASML Netherlands B.V.
Inventor： Gerbrand Van Der Zouw , Martin Jacobus Johan Jak , Martin Ebert
CPC classification number: G02B27/283 , G01J1/08 , G01N21/8806 , G01N21/9501 , G01N2021/8848 , G01N2201/0675 , G02F1/01 , G03F7/70633
Abstract: In an illumination system (12, 13) for a scatterometer, first and second spatial light modulators lie in a common plane and are formed by different portions of a single liquid crystal cell (260). Pre-polarizers (250) apply polarization to first and second radiation prior to the spatial light modulators. A first spatial light modulator (236-S) varies a polarization state of the first radiation in accordance with a first programmable pattern. Second spatial light modulator (236-P) varies a polarization state of the second radiation accordance with a second programmable pattern. A polarizing beam splitter (234) selectively transmits each of the spatially modulated first and second radiation to a common output path, depending on the polarization state of the radiation. In an embodiment, functions of pre-polarizers are performed by the polarizing beam splitter.
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7.发明授权公开(公告)号：US09811003B2
公开(公告)日：2017-11-07
申请号：US15355334
申请日：2016-11-18
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70625 , G03F7/70483 , G03F7/70633 , G03F7/70683
Abstract: A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
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公开(公告)号：US11106142B2
公开(公告)日：2021-08-31
申请号：US16733890
申请日：2020-01-03
Applicant: ASML NETHERLANDS B.V.
Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
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公开(公告)号：US10527953B2
公开(公告)日：2020-01-07
申请号：US15706625
申请日：2017-09-15
Applicant: ASML NETHERLANDS B.V.
Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
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公开(公告)号：US10386176B2
公开(公告)日：2019-08-20
申请号：US14835504
申请日：2015-08-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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