Invention Grant
- Patent Title: Metrology system and measurement method using the same
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Application No.: US15010935Application Date: 2016-01-29
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Publication No.: US10163669B2Publication Date: 2018-12-25
- Inventor: Ying-Chieh Hung , Ming-Hua Yu , Yi-Hung Lin , Jet-Rung Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G01B11/02
- IPC: G01B11/02 ; H01L21/67 ; G01B11/06 ; H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L21/66
Abstract:
A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.
Public/Granted literature
- US20170221739A1 METROLOGY SYSTEM AND MEASUREMENT METHOD USING THE SAME Public/Granted day:2017-08-03
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