Invention Grant
- Patent Title: Light-emitting diode
-
Application No.: US15722826Application Date: 2017-10-02
-
Publication No.: US10177281B2Publication Date: 2019-01-08
- Inventor: Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2014-0098641 20140731; KR10-2014-0131604 20140930
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/62 ; H01L33/14 ; H01L33/40 ; H01L33/38 ; H01L33/44

Abstract:
A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.
Public/Granted literature
- US20180182925A1 LIGHT-EMITTING DIODE Public/Granted day:2018-06-28
Information query
IPC分类: