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公开(公告)号：US20230044446A1
公开(公告)日：2023-02-09
申请号：US17964056
申请日：2022-10-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu Jang , Hong Suk Cho , Kyu Ho Lee , Chi Hyun In
Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.
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公开(公告)号：US10763392B2
公开(公告)日：2020-09-01
申请号：US16745758
申请日：2020-01-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu Jang , Hong Suk Cho , Kyu Ho Lee , Chi Hyun In
IPC: H01L33/08 , H01L33/02 , H01L33/46 , H01L23/00 , H01L33/48 , H01L33/44 , H01L33/62 , H01L33/38 , H01L33/40
Abstract: A light emitting device including a substrate, a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, a first contact electrode contacting the first semiconductor layer exposed around the mesa, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed on the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings, respectively, in which the mesa has indentations in plan view, the first contact electrode is spaced apart from the mesa by a predetermined distance, surrounds the mesa, and contacts the first semiconductor layer in the indentations, and each of the first and second bump electrodes covers one of the openings of the passivation layer and a portion thereof.
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公开(公告)号：US12183848B2
公开(公告)日：2024-12-31
申请号：US17964056
申请日：2022-10-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu Jang , Hong Suk Cho , Kyu Ho Lee , Chi Hyun In
Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.
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公开(公告)号：US11489087B2
公开(公告)日：2022-11-01
申请号：US16985077
申请日：2020-08-04
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu Jang , Hong Suk Cho , Kyu Ho Lee , Chi Hyun In
Abstract: A light emitting device including a substrate, a first semiconductor layer disposed on the substrate, a mesa including a second semiconductor layer and an active layer disposed on the first semiconductor layer, a first contact electrode contacting the first semiconductor layer, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode, and including a first opening disposed on the first contact electrode and a second opening disposed on the second contact electrode, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, and the first contact electrode includes an alloy layer.
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公开(公告)号：US20180261723A1
公开(公告)日：2018-09-13
申请号：US15971974
申请日：2018-05-04
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seong Kyu Jang , Kyu Ho Lee , Yeo Jin Yoon , Chi Hyun In , Jong Hyeon Chae , Hong Suk Cho
CPC classification number: H01L33/20 , H01L21/76 , H01L23/00 , H01L33/00 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/46 , H01L33/48 , H01L33/62 , H01L2224/48247 , H01L2224/48257 , H01L2924/19107 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
Abstract: An ultraviolet light emitting device is disclosed. An ultraviolet light emitting device according to a first embodiment of the disclosed technology comprises: a substrate having a first surface and a second surface facing the first surface; and a light emitting diode comprising a first type semiconductor layer, an active layer which emits ultraviolet light, and a second type semiconductor layer, the light emitting diode being formed on the first surface of the substrate, wherein the surface area of the substrate divided by the light emitting area of the light emitting diode may be ≤6.5.
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Patent Agency Ranking
公开(公告)号：US10573780B2
公开(公告)日：2020-02-25
申请号：US16069665
申请日：2017-01-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu Jang , Hong Suk Cho , Kyu Ho Lee , Chi Hyun In
Abstract: An ultraviolet light-emitting device including a substrate, a first conductive type semiconductor layer disposed on the substrate, a mesa disposed on the first conductive type semiconductor layer and including a second conductive type semiconductor layer and an active layer disposed between the semiconductor layers, a first contact electrode contacting the exposed first conductive type semiconductor layer around the mesa, a second contact electrode contacting the second conductive type semiconductor layer on the mesa, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed above the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings of the passivation layer, in which the mesa has depressions in plan view, and the first and second bump electrodes cover the openings and a portion of the passivation layer.
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公开(公告)号：US10177281B2
公开(公告)日：2019-01-08
申请号：US15722826
申请日：2017-10-02
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
Abstract: A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.
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公开(公告)号：US20180182925A1
公开(公告)日：2018-06-28
申请号：US15722826
申请日：2017-10-02
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
CPC classification number: H01L33/46 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.
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公开(公告)号：US09812616B2
公开(公告)日：2017-11-07
申请号：US15329993
申请日：2015-07-30
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
CPC classification number: H01L33/46 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: The present invention relates to a light-emitting diode having enhanced liability. More particularly, a light-emitting diode has enhanced liability in a high-temperature and/or high humidity environment as well as in a room-temperature environment and can have decrease in light-emitting characteristics prevented. In addition, the present invention relates to a light-emitting diode comprising a structure which enables enhancing of light reflection and having enhanced light extraction efficiency by means of light reflection through the structure.
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公开(公告)号：US20200152829A1
公开(公告)日：2020-05-14
申请号：US16745758
申请日：2020-01-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seong Kyu JANG , Hong Suk Cho , Kyu Ho Lee , Chi Hyun In
Abstract: A light emitting device including a substrate, a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, a first contact electrode contacting the first semiconductor layer exposed around the mesa, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed on the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings, respectively, in which the mesa has indentations in plan view, the first contact electrode is spaced apart from the mesa by a predetermined distance, surrounds the mesa, and contacts the first semiconductor layer in the indentations, and each of the first and second bump electrodes covers one of the openings of the passivation layer and a portion thereof.
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