Light-emitting diode
    2.
    发明授权

    公开(公告)号:US10177281B2

    公开(公告)日:2019-01-08

    申请号:US15722826

    申请日:2017-10-02

    Abstract: A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.

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