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公开(公告)号:US20170263821A1
公开(公告)日:2017-09-14
申请号:US15329993
申请日:2015-07-30
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
CPC classification number: H01L33/46 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: The present invention relates to a light-emitting diode having enhanced liability. More particularly, a light-emitting diode has enhanced liability in a high-temperature and/or high humidity environment as well as in a room-temperature environment and can have decrease in light-emitting characteristics prevented. In addition, the present invention relates to a light-emitting diode comprising a structure which enables enhancing of light reflection and having enhanced light extraction efficiency by means of light reflection through the structure.
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公开(公告)号:US10177281B2
公开(公告)日:2019-01-08
申请号:US15722826
申请日:2017-10-02
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
Abstract: A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.
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公开(公告)号:US20180182925A1
公开(公告)日:2018-06-28
申请号:US15722826
申请日:2017-10-02
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
CPC classification number: H01L33/46 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A light emitting diode includes a substrate, a lower semiconductor layer disposed on the substrate, a light emitting unit comprising a first upper semiconductor layer disposed in one region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the first upper semiconductor layer, a second current spreading portion comprising a third upper semiconductor layer disposed in another region of the lower semiconductor layer and an active layer interposed between the lower semiconductor layer and the third upper semiconductor layer, a first electrode disposed on the light emitting cell and electrically connected to the first upper semiconductor layer, and a second electrode separated from the light emitting cell and electrically connected to the lower semiconductor layer.
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公开(公告)号:US09812616B2
公开(公告)日:2017-11-07
申请号:US15329993
申请日:2015-07-30
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Chi Hyun In , Sang Min Kim , Dae Seok Park , Eun Ji Park , Hong Suk Cho
CPC classification number: H01L33/46 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2224/13 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: The present invention relates to a light-emitting diode having enhanced liability. More particularly, a light-emitting diode has enhanced liability in a high-temperature and/or high humidity environment as well as in a room-temperature environment and can have decrease in light-emitting characteristics prevented. In addition, the present invention relates to a light-emitting diode comprising a structure which enables enhancing of light reflection and having enhanced light extraction efficiency by means of light reflection through the structure.
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