Invention Grant
- Patent Title: Semiconductor switching circuit
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Application No.: US15532511Application Date: 2015-12-03
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Publication No.: US10177643B2Publication Date: 2019-01-08
- Inventor: Colin Charnock Davidson
- Applicant: General Electric Technology GmbH
- Applicant Address: CH Baden
- Assignee: GENERAL ELECTRIC TECHNOLOGY GMBH
- Current Assignee: GENERAL ELECTRIC TECHNOLOGY GMBH
- Current Assignee Address: CH Baden
- Agency: GE Global Patent Operation
- Agent Scott R. Stanley
- Priority: EP14275251 20141203
- International Application: PCT/EP2015/078498 WO 20151203
- International Announcement: WO2016/087576 WO 20160609
- Main IPC: H03K17/72
- IPC: H03K17/72 ; H02M1/08 ; H02M1/34 ; H03K17/0814 ; H03K17/10 ; H02M5/45 ; H02M1/088 ; H02M1/00

Abstract:
A semiconductor switching circuit, for use in a HVDC power converter, comprising: a main semiconductor switching element, including first and second connection terminals between which current flows from the first connection terminal to the second connection terminal and an auxiliary semiconductor switching element electrically connected between the first and second connection terminals thereof, and a control unit, operatively connected to auxiliary semiconductor switching element and programmed to control the switching element to create an alternative current path between the first and second connection terminals by at least two of: a fully-on mode in which the switching element is operated at its maximum rated base current or gate voltage; a pulsed switched mode in which the switching element is turned on and off; and an active mode in which the switching element is operated with a continuously variable base current or gate voltage.
Public/Granted literature
- US20170346384A1 SEMICONDUCTOR SWITCHING CIRCUIT Public/Granted day:2017-11-30
Information query
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