- 专利标题: Memory control circuit and method thereof
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申请号: US15814072申请日: 2017-11-15
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公开(公告)号: US10181353B2公开(公告)日: 2019-01-15
- 发明人: Ya-Min Chang
- 申请人: REALTEK SEMICONDUCTOR CORPORATION
- 申请人地址: TW Hsinchu
- 专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人: REALTEK SEMICONDUCTOR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 代理机构: WPAT, PC
- 优先权: TW105139373A 20161130
- 主分类号: G11C16/26
- IPC分类号: G11C16/26 ; G11C16/32 ; G06F13/14 ; G06F13/42 ; G11C8/06
摘要:
This invention discloses a memory control circuit and a method thereof. The memory control method includes the steps of: transmitting a first clock to a serial peripheral interface (SPI) NOR flash memory; transmitting a read instruction to the SPI NOR flash memory; waiting for a read waiting time period, which is associated with a specification of the SPI NOR flash memory and a cycle of the first clock; waiting for a delay time period, which is associated with a delay setting value and a cycle of a second clock different from the first clock; receiving read data returned from the SPI NOR flash memory; and adjusting the delay time period according to whether the read data are correct or not. This invention improves the stability of read operation of the SPI NOR flash memory and has advantages of simple circuit and flexible adjustment.
公开/授权文献
- US20180151232A1 MEMORY CONTROL CIRCUIT AND METHOD THEREOF 公开/授权日:2018-05-31
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