- 专利标题: Transimpedance amplifier with variable inductance input reducing peak variation over gain
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申请号: US15863440申请日: 2018-01-05
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公开(公告)号: US10181827B2公开(公告)日: 2019-01-15
- 发明人: Tom Broekaert
- 申请人: INPHI CORPORATION
- 申请人地址: US CA Santa Clara
- 专利权人: INPHI CORPORATION
- 当前专利权人: INPHI CORPORATION
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Ogawa P.C.
- 代理商 Richard T. Ogawa
- 主分类号: H03F3/08
- IPC分类号: H03F3/08 ; H04B10/54 ; H03F1/34 ; H04Q11/00 ; H04B10/25 ; H03F1/08 ; H03F1/32 ; H03F3/45 ; H04B10/69
摘要:
A transimpedance amplifier (TIA) structure includes an input node with a variable inductance component serving to reduce variation in peak amplitude over different gain conditions. According to certain embodiments, an inductor at the TIA input has a first node in communication with a Field Effect Transistor (FET) drain, and a second node in communication with the FET source. A control voltage applied to the FET gate effectively controls the input inductance by adding a variable impedance across the inductor. Under low gain conditions, lowering of inductance afforded by the control voltage applied to the FET reduces voltage peaking. TIAs in accordance with embodiments may be particularly suited to operate over a wide dynamic range to amplify incoming electrical signals received from a photodiode.
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