公开(公告)号：US09899969B1

公开(公告)日：2018-02-20

申请号：US15683444

申请日：2017-08-22

Applicant: INPHI CORPORATION

Inventor： Tom Broekaert

IPC: H03F3/08 ,  H03F1/34 ,  H04B10/25 ,  H04B10/54 ,  H04Q11/00

CPC classification number: H03F3/082 ,  H03F1/086 ,  H03F1/3211 ,  H03F1/342 ,  H03F3/45179 ,  H03F2200/339 ,  H03F2203/45528 ,  H04B10/2504 ,  H04B10/541 ,  H04B10/6931 ,  H04Q11/0005 ,  H04Q2011/0039 ,  H04Q2011/0041

Abstract: A transimpedance amplifier (TIA) structure includes an input node with a variable inductance component serving to reduce variation in peak amplitude over different gain conditions. According to certain embodiments, an inductor at the TIA input has a first node in communication with a Field Effect Transistor (FET) drain, and a second node in communication with the FET source. A control voltage applied to the FET gate effectively controls the input inductance by adding a variable impedance across the inductor. Under low gain conditions, lowering of inductance afforded by the control voltage applied to the FET reduces voltage peaking. TIAs in accordance with embodiments may be particularly suited to operate over a wide dynamic range to amplify incoming electrical signals received from a photodiode.

公开(公告)号：US09774305B1

公开(公告)日：2017-09-26

申请号：US15226814

申请日：2016-08-02

Applicant: INPHI CORPORATION

Inventor： Tom Broekaert

IPC: H03F3/08 ,  H03F1/34 ,  H04B10/25 ,  H04B10/54 ,  H04Q11/00

CPC classification number: H03F3/082 ,  H03F1/086 ,  H03F1/3211 ,  H03F1/342 ,  H03F3/45179 ,  H03F2200/339 ,  H03F2203/45528 ,  H04B10/2504 ,  H04B10/541 ,  H04B10/6931 ,  H04Q11/0005 ,  H04Q2011/0039 ,  H04Q2011/0041

Abstract: A transimpedance amplifier (TIA) structure includes an input node with a variable inductance component serving to reduce variation in peak amplitude over different gain conditions. According to certain embodiments, an inductor at the TIA input has a first node in communication with a Field Effect Transistor (FET) drain, and a second node in communication with the FET source. A control voltage applied to the FET gate effectively controls the input inductance by adding a variable impedance across the inductor. Under low gain conditions, lowering of inductance afforded by the control voltage applied to the FET reduces voltage peaking TIAs in accordance with embodiments may be particularly suited to operate over a wide dynamic range to amplify incoming electrical signals received from a photodiode.

公开(公告)号：US10574195B2

公开(公告)日：2020-02-25

申请号：US16158022

申请日：2018-10-11

Applicant: INPHI CORPORATION

Inventor： Tom Broekaert

IPC: H03F3/08 ,  H03F1/34 ,  H04Q11/00 ,  H04B10/25 ,  H04B10/54 ,  H03F1/08 ,  H03F1/32 ,  H03F3/45 ,  H04B10/69

Abstract: A transimpedance amplifier (TIA) structure includes an input node with a variable inductance component serving to reduce variation in peak amplitude over different gain conditions. According to certain embodiments, an inductor at the TIA input has a first node in communication with a Field Effect Transistor (FET) drain, and a second node in communication with the FET source. A control voltage applied to the FET gate effectively controls the input inductance by adding a variable impedance across the inductor. Under low gain conditions, lowering of inductance afforded by the control voltage applied to the FET reduces voltage peaking. TIAs in accordance with embodiments may be particularly suited to operate over a wide dynamic range to amplify incoming electrical signals received from a photodiode.

公开(公告)号：US10181827B2

公开(公告)日：2019-01-15

申请号：US15863440

申请日：2018-01-05

Applicant: INPHI CORPORATION

Inventor： Tom Broekaert

IPC: H03F3/08 ,  H04B10/54 ,  H03F1/34 ,  H04Q11/00 ,  H04B10/25 ,  H03F1/08 ,  H03F1/32 ,  H03F3/45 ,  H04B10/69

Abstract: A transimpedance amplifier (TIA) structure includes an input node with a variable inductance component serving to reduce variation in peak amplitude over different gain conditions. According to certain embodiments, an inductor at the TIA input has a first node in communication with a Field Effect Transistor (FET) drain, and a second node in communication with the FET source. A control voltage applied to the FET gate effectively controls the input inductance by adding a variable impedance across the inductor. Under low gain conditions, lowering of inductance afforded by the control voltage applied to the FET reduces voltage peaking. TIAs in accordance with embodiments may be particularly suited to operate over a wide dynamic range to amplify incoming electrical signals received from a photodiode.