Invention Grant
- Patent Title: Method for producing cyclic silane using concentration method
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Application No.: US15326634Application Date: 2015-07-14
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Publication No.: US10202283B2Publication Date: 2019-02-12
- Inventor: Yuichi Goto , Kentaro Nagai , Masahisa Endo , Gun Son
- Applicant: THIN FILM ELECTRONICS ASA
- Applicant Address: NO Oslo
- Assignee: Thin Film Electronics ASA
- Current Assignee: Thin Film Electronics ASA
- Current Assignee Address: NO Oslo
- Agency: Central California IP Group, P.C.
- Agent Andrew D. Fortney
- Priority: JP2014-145818 20140716
- International Application: PCT/JP2015/070164 WO 20150714
- International Announcement: WO2016/010038 WO 20160121
- Main IPC: C01B33/04
- IPC: C01B33/04

Abstract:
A cyclic silane having high purity, a composition containing a polysilane obtained by polymerization of the cyclic silane, and a silicon thin film are disclosed. A method for producing a cyclic silane of the formula (SiH2)n, where n is an integer of 4 to 6, includes reacting a cyclic silane compound of the formula (SiR1R2)n (where R1 and R2 are each a hydrogen atom, a C1-6 alkyl group, or a substituted or unsubstituted phenyl group) with a hydrogen halide in the presence of an aluminum halide to obtain a cyclic silane of the formula (SiR3R4)n (where R3 and R4 are each a halogen atom), and then distilling the solution, and reducing the cyclic silane of the formula (SiR3R4)n with hydrogen or lithium aluminum hydride. The distillation may be carried out at a temperature of 40° C. to 80° C. under a reduced pressure of 0 to 30 Torr.
Public/Granted literature
- US20170203970A1 Method for Producing Cyclic Silane Using Concentration Method Public/Granted day:2017-07-20
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