公开(公告)号：US10450419B2

公开(公告)日：2019-10-22

申请号：US15326632

申请日：2015-06-30

Applicant: Thin Film Electronics ASA

Inventor： Masahisa Endo ,  Gun Son ,  Yuichi Goto ,  Kentaro Nagai

IPC: C08G77/60 ,  C01B33/02 ,  C01B33/04 ,  C03C17/22 ,  B05D3/02 ,  C01B33/021 ,  C09D5/24 ,  C09D183/16 ,  H01L21/02

Abstract: There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100° C. to 425° C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

公开(公告)号：US10202283B2

公开(公告)日：2019-02-12

申请号：US15326634

申请日：2015-07-14

Applicant: THIN FILM ELECTRONICS ASA

Inventor： Yuichi Goto ,  Kentaro Nagai ,  Masahisa Endo ,  Gun Son

IPC: C01B33/04

Abstract: A cyclic silane having high purity, a composition containing a polysilane obtained by polymerization of the cyclic silane, and a silicon thin film are disclosed. A method for producing a cyclic silane of the formula (SiH2)n, where n is an integer of 4 to 6, includes reacting a cyclic silane compound of the formula (SiR1R2)n (where R1 and R2 are each a hydrogen atom, a C1-6 alkyl group, or a substituted or unsubstituted phenyl group) with a hydrogen halide in the presence of an aluminum halide to obtain a cyclic silane of the formula (SiR3R4)n (where R3 and R4 are each a halogen atom), and then distilling the solution, and reducing the cyclic silane of the formula (SiR3R4)n with hydrogen or lithium aluminum hydride. The distillation may be carried out at a temperature of 40° C. to 80° C. under a reduced pressure of 0 to 30 Torr.