- 专利标题： Spin transfer torque magnetic random access memory for supporting operational modes with mode register
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申请号： US13768858申请日： 2013-02-15
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公开(公告)号： US10204670B2公开(公告)日： 2019-02-12
- 发明人: Chan-kyung Kim , Dong-seok Kang , Hye-jin Kim , Chul-woo Park , Dong-hyun Sohn , Yun-sang Lee , Sang-beom Kang , Hyung-rock Oh , Soo-ho Cha
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Law, PLLC
- 优先权： KR10-2012-0052594 20120517
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/16 ; G06F12/02
摘要：
A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.
公开/授权文献
- US20130311717A1 MAGNETIC RANDOM ACCESS MEMORY 公开/授权日：2013-11-21
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