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公开(公告)号:US10446207B2
公开(公告)日:2019-10-15
申请号:US16253956
申请日:2019-01-22
发明人: Chan-kyung Kim , Dong-seok Kang , Hye-jin Kim , Chul-woo Park , Dong-hyun Sohn , Yun-sang Lee , Sang-beom Kang , Hyung-rock Oh , Soo-ho Cha
摘要: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.
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公开(公告)号:US10204670B2
公开(公告)日:2019-02-12
申请号:US13768858
申请日:2013-02-15
发明人: Chan-kyung Kim , Dong-seok Kang , Hye-jin Kim , Chul-woo Park , Dong-hyun Sohn , Yun-sang Lee , Sang-beom Kang , Hyung-rock Oh , Soo-ho Cha
摘要: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.
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