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公开(公告)号:US20190259737A1
公开(公告)日:2019-08-22
申请号:US16134583
申请日:2018-09-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun-seok Song , Chan-kyung Kim , Tae-joo Hwang
IPC: H01L25/10 , H01L23/498 , G11C5/06
Abstract: A semiconductor package includes: a memory sub-package including a first connecting layer and a plurality of memory chips disposed on the first connecting layer; a logic sub-package including a second connecting layer, a controller chip disposed on the second connecting layer, and a buffer chip connected to the controller chip and the plurality of memory chips; and a plurality of inter-package connecting members each of which connects the memory sub-package and the logic sub-package, wherein the buffer chip is connected to the plurality of memory chips via a plurality of first data transfer lines each having a first data transfer rate, the buffer chip is connected to the controller chip via a plurality of second data transfer lines each having a second data transfer rate, and the first data transfer rate is less than the second data transfer rate.
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公开(公告)号:US10665575B2
公开(公告)日:2020-05-26
申请号:US16585123
申请日:2019-09-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun-seok Song , Chan-kyung Kim , Tae-joo Hwang
IPC: H01L23/495 , H01L25/10 , H01L23/498 , G11C5/06 , G11C5/04 , H01L23/00
Abstract: A semiconductor package includes: a memory sub-package including a first connecting layer and a plurality of memory chips disposed on the first connecting layer; a logic sub-package including a second connecting layer, a controller chip disposed on the second connecting layer, and a buffer chip connected to the controller chip and the plurality of memory chips; and a plurality of inter-package connecting members each of which connects the memory sub-package and the logic sub-package, wherein the buffer chip is connected to the plurality of memory chips via a plurality of first data transfer lines each having a first data transfer rate, the buffer chip is connected to the controller chip via a plurality of second data transfer lines each having a second data transfer rate, and the first data transfer rate is less than the second data transfer rate.
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公开(公告)号:US10446207B2
公开(公告)日:2019-10-15
申请号:US16253956
申请日:2019-01-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chan-kyung Kim , Dong-seok Kang , Hye-jin Kim , Chul-woo Park , Dong-hyun Sohn , Yun-sang Lee , Sang-beom Kang , Hyung-rock Oh , Soo-ho Cha
Abstract: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.
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公开(公告)号:US10475774B2
公开(公告)日:2019-11-12
申请号:US16134583
申请日:2018-09-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun-seok Song , Chan-kyung Kim , Tae-joo Hwang
IPC: H01L23/495 , H01L25/10 , H01L23/498 , G11C5/06 , H01L23/00
Abstract: A semiconductor package includes: a memory sub-package including a first connecting layer and a plurality of memory chips disposed on the first connecting layer; a logic sub-package including a second connecting layer, a controller chip disposed on the second connecting layer, and a buffer chip connected to the controller chip and the plurality of memory chips; and a plurality of inter-package connecting members each of which connects the memory sub-package and the logic sub-package, wherein the buffer chip is connected to the plurality of memory chips via a plurality of first data transfer lines each having a first data transfer rate, the buffer chip is connected to the controller chip via a plurality of second data transfer lines each having a second data transfer rate, and the first data transfer rate is less than the second data transfer rate.
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公开(公告)号:US10204670B2
公开(公告)日:2019-02-12
申请号:US13768858
申请日:2013-02-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chan-kyung Kim , Dong-seok Kang , Hye-jin Kim , Chul-woo Park , Dong-hyun Sohn , Yun-sang Lee , Sang-beom Kang , Hyung-rock Oh , Soo-ho Cha
Abstract: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.
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