Invention Grant
- Patent Title: Crystalline gallium nitride containing flourine
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Application No.: US15061069Application Date: 2016-03-04
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Publication No.: US10208396B2Publication Date: 2019-02-19
- Inventor: Mark Philip D'Evelyn , Kristi Jean Narang , Dong-Sil Park , Huicong Hong , Xian-An Cao , Larry Qiang Zeng
- Applicant: Soraa, Inc.
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: FisherBroyles LLP
- Main IPC: C30B29/40
- IPC: C30B29/40 ; C30B7/00 ; C30B9/08 ; C30B19/02 ; C30B19/12 ; C30B25/02 ; C30B7/10 ; C30B25/20 ; C30B29/68

Abstract:
A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
Public/Granted literature
- US20160319457A1 METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER Public/Granted day:2016-11-03
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