- 专利标题： Multi time programmable memories using local implantation in high-K/ metal gate technologies
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申请号： US15176982申请日： 2016-06-08
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公开(公告)号： US10211064B2公开(公告)日： 2019-02-19
- 发明人: Takashi Ando , Eduard A. Cartier , Chandrasekharan Kothandaraman
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L27/11521
- IPC分类号： H01L27/11521 ; H01L29/51 ; H01L21/3115 ; H01L29/49 ; H01L21/8234 ; H01L21/28 ; H01L29/66 ; H01L29/792 ; G11C16/04 ; H01L27/11568
摘要：
A metal oxide semiconductor field effect transistors (MOSFET) memory array, including a complementary metal oxide semiconductor (CMOS) cell including an n-type MOSFET having a modified gate dielectric; and an n-type or p-type MOSFET having an unmodified gate dielectric layer, where the modified gate dielectric layer incorporates an oxygen scavenging species.
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