- 专利标题: Memory device with dynamic storage mode control
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申请号: US15693153申请日: 2017-08-31
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公开(公告)号: US10223259B1公开(公告)日: 2019-03-05
- 发明人: Yun Li , Kishore Kumar Muchherla , Peter Feeley , Ashutosh Malshe , Daniel J. Hubbard , Christopher S. Hale , Kevin R. Brandt , Sampath K. Ratnam
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F12/02 ; G06F12/0891
摘要:
A memory system includes: a memory array including a plurality of memory cells, the plurality of memory cells including a plurality of cache memory cells; and a controller coupled to the memory array, the controller configured to: track usage of a first subset of the plurality of cache memory cells operating in a single-level cell (SLC) mode, wherein the tracking includes monitoring for an idle time event; and designate a storage mode for a second subset of the plurality of cache memory cells based on the tracked usage of the first subset, wherein the storage mode determines a storage density to be used for data writes.
公开/授权文献
- US20190065365A1 MEMORY DEVICE WITH DYNAMIC STORAGE MODE CONTROL 公开/授权日:2019-02-28
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