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公开(公告)号:US11853205B2
公开(公告)日:2023-12-26
申请号:US18172205
申请日:2023-02-21
发明人: Kishore Kumar Muchherla , Peter Feeley , Ashutosh Malshe , Daniel J. Hubbard , Christopher S. Hale , Kevin R. Brandt , Sampath K. Ratnam , Yun Li , Marc S. Hamilton
CPC分类号: G06F12/0253 , G06F3/064 , G06F3/0629 , G06F3/0634 , G06F3/0688 , G06F3/0689 , G06F12/00 , G06F12/0646 , G06F12/0891 , G06F2212/1044 , G06F2212/2022 , G06F2212/7205 , G11C11/5621 , G11C2211/5641
摘要: A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: designate a storage mode for a target set of memory cells based on valid data in a source block, wherein the target set of memory cells are configured with a capacity to store up to a maximum number of bits per cell, and the storage mode is for dynamically configuring the target set of memory cells in as cache memory that stores a number of bits less per cell than the corresponding maximum capacity.
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公开(公告)号:US11726669B2
公开(公告)日:2023-08-15
申请号:US17703818
申请日:2022-03-24
发明人: Yun Li , John Traver
IPC分类号: G06F3/06
CPC分类号: G06F3/0619 , G06F3/0659 , G06F3/0679
摘要: Methods, systems, and devices for coherency locking are described in which different types of writes have different coherency locking schemes. The types of writes can be associated with different sources of write commands, such as external commands from a host system or internal commands from a garbage collection procedure. Coherency locking can be performed for external write commands received from a host system, while coherency locking is not performed for internal write commands. If an internal write is received for data that has been previously written at a prior location, a write to one or more physical memory devices can be performed and, once an acknowledgment is received that the write is complete, an update to a mapping table with the new location of the data is performed.
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公开(公告)号:US11520502B2
公开(公告)日:2022-12-06
申请号:US16731936
申请日:2019-12-31
发明人: Yun Li , James P. Crowley , Jiangang Wu , Peng Xu
IPC分类号: G06F3/06
摘要: Methods, systems, and devices for performance control for a memory sub-system are described. A memory sub-system can monitor a backend for writing data to a memory device. The memory sub-system can determine that the bandwidth of the backend satisfies one or more performance criteria that are based on performance between the memory sub-system and a host system. In some embodiments, the memory sub-system can allocate a quantity of slots of a buffer to a frontend of the memory sub-system based on determining that the bandwidth of the backend satisfies the one or more performance criteria. Slots of the buffer can be configured to receive data from the frontend for writing to the memory device by the backend.
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公开(公告)号:US20220283713A1
公开(公告)日:2022-09-08
申请号:US17703818
申请日:2022-03-24
发明人: Yun Li , John Traver
IPC分类号: G06F3/06
摘要: Methods, systems, and devices for coherency locking are described in which different types of writes have different coherency locking schemes. The types of writes can be associated with different sources of write commands, such as external commands from a host system or internal commands from a garbage collection procedure. Coherency locking can be performed for external write commands received from a host system, while coherency locking is not performed for internal write commands. If an internal write is received for data that has been previously written at a prior location, a write to one or more physical memory devices can be performed and, once an acknowledgment is received that the write is complete, an update to a mapping table with the new location of the data is performed.
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公开(公告)号:US20210342261A1
公开(公告)日:2021-11-04
申请号:US17374906
申请日:2021-07-13
发明人: Kishore Kumar Muchherla , Peter Feeley , Ashutosh Malshe , Daniel J. Hubbard , Christopher S. Hale , Kevin R. Brandt , Sampath K. Ratnam , Yun Li , Marc S. Hamilton
IPC分类号: G06F12/02 , G06F12/0891 , G06F3/06 , G06F12/06 , G06F12/00
摘要: A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: designate a storage mode for a target set of memory cells based on valid data in a source block, wherein the target set of memory cells are configured with a capacity to store up to a maximum number of bits per cell, and the storage mode is for dynamically configuring the target set of memory cells in as cache memory that stores a number of bits less per cell than the corresponding maximum capacity.
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公开(公告)号:US20210303340A1
公开(公告)日:2021-09-30
申请号:US16828738
申请日:2020-03-24
发明人: Yun Li , Jiangang Wu , James P. Crowley
摘要: Methods, systems, and devices for a read counter for quality of service design are described. First commands may be assigned to a first queue of a memory die of a memory sub-system, wherein the first queue is associated with a first priority level. The memory die may include a second queue associated with a second priority level different from the first priority level, the second queue comprising one or more second commands assigned. Based at least in part on a counter associated with the first queue and the first and second priority levels, it may be determined that a threshold number of the first commands of the first queue have issued without a command from the one or more second commands having issued. A command from the second commands may issue before issuing a next command of the first commands based at least in part on the counter.
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公开(公告)号:US20210278995A1
公开(公告)日:2021-09-09
申请号:US16809371
申请日:2020-03-04
发明人: John Traver , Ning Zhao , Tom V. Geukens , Yun Li
摘要: Methods, systems, and devices for internal commands for access operations are described. A memory sub-system can receive a request to perform an access operation. A first core of the memory sub-system can generate an internal command for performing the access operation. The internal command can include information for storing in a reference queue of the memory sub-system and an identification of a command entry of the reference queue. The first core can issue the internal command to perform the access operation and a second core of the memory sub-system can store the information in the command entry of the reference queue.
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公开(公告)号:US20200097402A1
公开(公告)日:2020-03-26
申请号:US16697724
申请日:2019-11-27
发明人: Kishore Kumar Muchherla , Peter Feeley , Ashutosh Malshe , Daniel J. Hubbard , Christopher S. Hale , Kevin R. Brandt , Sampath K. Ratnam , Yun Li , Marc S. Hamilton
IPC分类号: G06F12/02 , G06F12/0891 , G06F3/06 , G06F12/06 , G06F12/00
摘要: A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: select a garbage collection (GC) source block storing valid data, and designate a storage mode for an available memory block based on the valid data, wherein the storage mode is for configuring memory cells in the available memory block as cache memory that stores a number of bits less than maximum storage capacities thereof for subsequent or upcoming data writes.
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公开(公告)号:US10430262B2
公开(公告)日:2019-10-01
申请号:US16178963
申请日:2018-11-02
发明人: Michael G. Miller , Ashutosh Malshe , Violante Moschiano , Peter Feeley , Gary F. Besinga , Sampath K. Ratnam , Walter Di-Francesco , Renato C. Padilla, Jr. , Yun Li , Kishore Kumar Muchherla
IPC分类号: G11C16/10 , G06F11/07 , G06F3/06 , G06F11/10 , G11C11/56 , G11C16/22 , G11C16/30 , G11C16/34 , G11C5/14
摘要: Apparatus having an array of memory cells include a controller configured to read a particular memory cell of a last written page of memory cells of a block of memory cells of the array of memory cells, determine whether a threshold voltage of the particular memory cell is less than a particular voltage level, and mark the last written page of memory cells as affected by power loss during a programming operation of the last written page of memory cells when the threshold voltage of the particular memory cell is determined to be higher than the particular voltage level.
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公开(公告)号:US10303535B2
公开(公告)日:2019-05-28
申请号:US15911490
申请日:2018-03-05
发明人: Michael G. Miller , Ashutosh Malshe , Violante Moschiano , Peter Feeley , Gary F. Besinga , Sampath K. Ratnam , Walter Di-Francesco , Renato C. Padilla, Jr. , Yun Li , Kishore Kumar Muchherla
摘要: Apparatus include controllers configured to iteratively program a group of memory cells to respective desired data states; determine whether a power loss to the apparatus is indicated while iteratively programming the group of memory cells; and if a power loss to the apparatus is indicated, to change the desired data state of the particular memory cell before continuing with the programming. Apparatus further include controllers configured to read a particular memory cell of a last written page of memory cells, determine whether a threshold voltage of the particular memory cell is less than a particular voltage level, and to mark the last written page of memory cells as affected by power loss during a programming operation of the last written page of memory cells when the threshold voltage of the particular memory cell is determined to be higher than the particular voltage level.
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