Invention Grant
- Patent Title: Control of directionality in atomic layer etching
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Application No.: US15615691Application Date: 2017-06-06
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Publication No.: US10229837B2Publication Date: 2019-03-12
- Inventor: Andreas Fischer , Thorsten Lill , Richard Janek
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Penilla IP, APC
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/02 ; H01L21/311 ; H01L21/225 ; H01L21/326
Abstract:
A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.
Public/Granted literature
- US20180366343A9 CONTROL OF DIRECTIONALITY IN ATOMIC LAYER ETCHING Public/Granted day:2018-12-20
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