A thin film transistor substrate includes a substrate and thin film transistors arranged in first and second directions above the substrate. Each thin film transistor includes a gate electrode, a drain electrode, a source electrode and a semiconductor layer. The drain electrode is above the gate electrode and includes a first drain oblique portion and a second drain oblique portion extending from an end portion of the first drain oblique portion. The source electrode is spaced apart from the drain electrode above the gate electrode and includes a first source oblique portion and a second source oblique portion extending from an end portion of the first source oblique portion. The semiconductor layer at least partially overlaps the gate electrode and includes a drain region to which the drain electrode is connected, a source region to which the source electrode is connected, and a channel region therebetween.