Invention Grant
- Patent Title: Partial layer transfer system and method
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Application No.: US15026268Application Date: 2013-12-18
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Publication No.: US10236282B2Publication Date: 2019-03-19
- Inventor: Patrick Morrow , Kimin Jun , Il-Seok Son , Rajashree Baskaran , Paul B. Fischer
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2013/075947 WO 20131218
- International Announcement: WO2015/094208 WO 20150625
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/8258 ; H01L21/683 ; H01L23/528 ; H01L29/16 ; H01L29/20 ; H01L27/085

Abstract:
An embodiment includes an apparatus comprising: a first layer, including a first semiconductor switching element, coupled to a first portion of a first bonding material; and a second layer, including a second semiconductor switching element, coupled to a second portion of a second bonding material; wherein (a) the first layer is over the second layer, (b) the first portion is directly connected to the second portion, and (c) first sidewalls of the first portion are unevenly serrated. Other embodiments are described herein.
Public/Granted literature
- US20160233206A1 PARTIAL LAYER TRANSFER SYSTEM AND METHOD Public/Granted day:2016-08-11
Information query
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