Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US15916261Application Date: 2018-03-08
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Publication No.: US10236383B2Publication Date: 2019-03-19
- Inventor: Li-Wei Feng , Shih-Hung Tsai , Chao-Hung Lin , Chih-Kai Hsu , Yu-Hsiang Hung , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510159728 20150407
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/78 ; H01L29/66
Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, wherein the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure.
Public/Granted literature
- US20180197981A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2018-07-12
Information query
IPC分类:
