Invention Grant
- Patent Title: Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor
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Application No.: US15564727Application Date: 2016-01-29
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Publication No.: US10249707B2Publication Date: 2019-04-02
- Inventor: Shukun Qi
- Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Applicant Address: CN Wuxi New District, Jiangsu
- Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee Address: CN Wuxi New District, Jiangsu
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: CN201510163925 20150408
- International Application: PCT/CN2016/072839 WO 20160129
- International Announcement: WO2016/161840 WO 20161013
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/10 ; H01L29/66
Abstract:
A laterally diffused metal oxide semiconductor field-effect transistor, comprising a substrate (110), a source electrode (150), a drain electrode (140), a body region (160), and a well region on the substrate, the well region comprising: an insertion-type well (122) having P-type doping, being arranged below the drain electrode and being connected to the drain electrode; N wells (124), arranged on two sides of the insertion-type well; and P wells (126), arranged next to the N wells and being connected to the N wells; the source electrode and the body region are arranged in the P well.
Public/Granted literature
- US20180114831A1 LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR Public/Granted day:2018-04-26
Information query
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