Invention Grant
- Patent Title: Thin film deposition preparation device and method
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Application No.: US15121045Application Date: 2015-04-30
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Publication No.: US10253413B2Publication Date: 2019-04-09
- Inventor: Bowan Tao , Jie Xiong , Fei Zhang , Chaoren Li , Xiaohui Zhao , Yanrong Li
- Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- Applicant Address: CN Chengdu
- Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- Current Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
- Current Assignee Address: CN Chengdu
- Agent Gokalp Bayramoglu
- Priority: CN201410250562 20140608
- International Application: PCT/CN2015/077941 WO 20150430
- International Announcement: WO2015/188668 WO 20151217
- Main IPC: C23C16/46
- IPC: C23C16/46 ; C23C16/56 ; C23C14/24 ; C23C14/08 ; C23C14/54 ; C23C14/56 ; C23C16/40 ; C23C16/54

Abstract:
The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.
Public/Granted literature
- US20170191163A1 THIN FILM DEPOSITION PREPARATION DEVICE AND METHOD Public/Granted day:2017-07-06
Information query
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