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公开(公告)号:US11114579B2
公开(公告)日:2021-09-07
申请号:US16905995
申请日:2020-06-19
Inventor: Jie Xiong , Chuanhui Gong , Yang Wang , Gaofeng Rao , Chujun Yin , Chaoyi Yan , Junwei Chu , Jianwen Huang , Miao Zhang , Xinrui Chen , Yuqing Liu , Chunyang Wu , Xianfu Wang , Liping Dai , Wanli Zhang , Yanrong Li
IPC: H01L31/18 , C23C14/18 , C23C14/24 , C23C14/04 , H01L31/09 , C30B29/12 , C30B29/64 , H01L31/0224 , H01L31/032 , C30B25/10
Abstract: A method for preparing an ultrathin two-dimensional (2D) monocrystalline nanosheet, the method including: 1) placing BiX3 powder where X=I, Br, or Cl in a crucible, and putting the crucible on a first heating zone of a furnace disposed at a gas inlet of a quartz tube; placing substrates covered with metal sheets on a second heating zone of the furnace disposed at a gas outlet of the quartz tube; 2) vacuumizing the quartz tube; pumping Ar gas into the quartz tube until the air pressure is 101.325 kPa; pumping a carrier gas into the quartz tube; and 3) heating and maintaining the second heating zone; heating the first heating zone for BiX3 evaporation until producing chemical reaction between BiX3 and the metal sheets, and preparing ultrathin 2D nanosheets on the substrates simultaneously; and cooling the substrate naturally to 15-30° C.
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公开(公告)号:US10253413B2
公开(公告)日:2019-04-09
申请号:US15121045
申请日:2015-04-30
Inventor: Bowan Tao , Jie Xiong , Fei Zhang , Chaoren Li , Xiaohui Zhao , Yanrong Li
Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.
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公开(公告)号:US11180854B2
公开(公告)日:2021-11-23
申请号:US16283809
申请日:2019-02-24
Inventor: Bowan Tao , Jie Xiong , Fei Zhang , Chaoren Li , Xiaohui Zhao , Yanrong Li
IPC: C23C16/46 , C23C16/54 , C23C16/40 , C23C14/54 , C23C16/56 , C23C14/08 , C23C14/24 , C23C14/56 , C23C14/00
Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.
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