Invention Grant
- Patent Title: Semiconductor memory device having clock generation scheme based on command
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Application No.: US15081071Application Date: 2016-03-25
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Publication No.: US10255964B2Publication Date: 2019-04-09
- Inventor: Seungjun Shin , Su Yeon Doo , Taeyoung Oh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si,Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si,Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2015-0094342 20150701
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C8/10 ; G11C11/4076 ; G11C11/408 ; G11C11/4096 ; G11C7/10 ; G11C8/18

Abstract:
A semiconductor memory device includes a command decoder configured to generate an auto-sync signal in response to a command for writing data at a memory cell or reading data from a memory cell, and an internal data clock generating circuit configured to phase synchronize a second clock, having a clock frequency higher than a clock frequency of a first clock, with the first clock in response to the auto-sync signal.
Public/Granted literature
- US20170004869A1 SEMICONDUCTOR MEMORY DEVICE HAVING CLOCK GENERATION SCHEME BASED ON COMMAND Public/Granted day:2017-01-05
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