Invention Grant
- Patent Title: Reduced-height electronic memory system and method
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Application No.: US14964972Application Date: 2015-12-10
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Publication No.: US10256213B2Publication Date: 2019-04-09
- Inventor: Eng Huat Goh , Min Suet Lim , Jiun Hann Sir
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/34 ; H01L23/48 ; H01L23/52 ; H01L25/065 ; H01L25/00 ; H01L27/108 ; H01L23/31 ; H01L25/10 ; H01L25/18

Abstract:
A computer memory module can include a molded layer disposed on a DRAM substrate. The molded layer can encapsulate a DRAM die and wire bonds that connect the DRAM die to the DRAM substrate, and can be shaped to include at least one cavity having a footprint sized to accommodate a system on chip (SOC) die. The DRAM module can attach to an SOC package so that the SOC die and the DRAM die are both positioned between the DRAM substrate and the SOC package, the DRAM substrate can form its electrical connections on only one side of the DRAM substrate, and the SOC die can fit at least partially into the cavity in the molded layer. This can reduce a package Z-height, compared to conventional DRAM packages in which the SOC die and the DRAM die are positioned on opposite sides of the DRAM substrate.
Public/Granted literature
- US20170170147A1 REDUCED-HEIGHT MEMORY SYSTEM AND METHOD Public/Granted day:2017-06-15
Information query
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