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公开(公告)号:US11908793B2
公开(公告)日:2024-02-20
申请号:US17716937
申请日:2022-04-08
申请人: Intel Corporation
IPC分类号: H01L23/522 , H01L23/00
CPC分类号: H01L23/5226 , H01L24/09 , H01L24/17 , H01L2224/02371 , H01L2224/02372 , H01L2924/01029
摘要: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.
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公开(公告)号:US11699664B2
公开(公告)日:2023-07-11
申请号:US17089756
申请日:2020-11-05
申请人: Intel Corporation
发明人: Eng Huat Goh , Tin Poay Chuah , Yew San Lim , Min Suet Lim
IPC分类号: H01L23/552 , H05K3/28 , H05K1/02
CPC分类号: H01L23/552 , H05K1/0209 , H05K3/284
摘要: According to the various aspects, the present device includes a printed circuit board having a top surface and a bottom surface, with a plurality of semiconductor devices coupled to the top surface and a flexible electromagnetic shield wrap conformally positioned over and between the plurality of semiconductor devices and the top surface of the printed circuit board. The flexible electromagnetic shield wrap is conformally positioned by applying a vacuum and is removable after the vacuum seal is broken.
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公开(公告)号:US20220174820A1
公开(公告)日:2022-06-02
申请号:US17671566
申请日:2022-02-14
申请人: Intel Corporation
发明人: Mooi Ling Chang , Tin Poay Chuah , Eng Huat Goh , Min Suet Lim , Twan Sing Loo
摘要: In one embodiment, a system includes a first circuit defining recesses along an edge of the first circuit board, and a second circuit board defining fins extending from at least one outer edge of the second circuit board. The fins of the second circuit board are positioned within the recesses of the second circuit board to connect the circuit boards in a co-planar manner. The fins and recesses may be shaped to provide an interlocking connection of the first and second circuit boards in the co-planar direction.
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公开(公告)号:US10923415B2
公开(公告)日:2021-02-16
申请号:US16328231
申请日:2016-09-14
申请人: Intel Corporation
发明人: Eng Huat Goh , Jiun Hann Sir , Min Suet Lim , Shawna M. Liff , Feras Eid
IPC分类号: H01L23/498 , H01L23/552 , H01L23/00 , H01L21/48 , H01L23/538
摘要: Semiconductor packages that mitigate warpage and/or other types or mechanical deformation of package substrates are provided. In some embodiments, a package substrate can include a peripheral conductive region having an assembly of rigid conductive members, such as metal layers, metal interconnects, or a combination thereof. The peripheral conductive region can be integrated into the package substrate during the manufacturing of the package substrate. In some implementations, lithographically defined conductive members can be leveraged to form extended conductive layers that can provide increased stiffness compared to nearly cylindrical conductive vias. Non-peripheral conductive regions also can be integrated into a semiconductor package in order to reduce specific patterns of mechanical deformations and/or to provide other functionality, such as electromagnetic interference (EMI) shielding.
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公开(公告)号:US10609813B2
公开(公告)日:2020-03-31
申请号:US15182091
申请日:2016-06-14
申请人: Intel Corporation
发明人: Eng Huat Goh , Min Suet Lim , Fern Nee Tan , Khang Choong Yong , Jiun Hann Sir
摘要: Capacitive interconnects and processes for fabricating the capacitive interconnects are provided. In some embodiments, the capacitive interconnect includes first metal layers, second metal layers; and dielectric layers including a dielectric layer that intercalates a first metal layer of the first metal layers and a second metal layer of the second metal layers. Such layers can be assembled in a nearly concentric arrangement, where the dielectric layer abuts the first metal layer and the second metal layer abuts the dielectric layer. In addition, the capacitive interconnect can include a first electrode electrically coupled to at least one of the first metal layers, and a second electrode electrically coupled to at least one of the second metal layers, the second electrode assembled opposite to the first electrode. The first electrode and the second electrode can include respective solder tops.
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公开(公告)号:US20200027867A1
公开(公告)日:2020-01-23
申请号:US16531688
申请日:2019-08-05
申请人: Intel Corporation
发明人: Eng Huat Goh , Hoay Tien Teoh
IPC分类号: H01L25/18 , H01L23/48 , H01L25/065 , H01L25/10 , H01L23/13 , H01L23/538 , H01L23/36 , H01L23/00 , H01L21/48 , H01L23/367
摘要: Donut-shaped Dynamic Random Access Memory (DRAM) includes a hole that fits around a processor, such that the DRAM and the processor are adjacent to one another on an Integrated Circuit (IC) package. In an embodiment, a heat spreader is mounted on top of the processor and covers a top of the DRAM without touching the DRAM.
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公开(公告)号:US10411001B2
公开(公告)日:2019-09-10
申请号:US15781798
申请日:2015-12-16
申请人: Intel Corporation
发明人: Eng Huat Goh , Hoay Tien Teoh
IPC分类号: H01L25/18 , H01L25/00 , H01L23/00 , H01L23/367 , H01L23/538 , H01L21/48 , H01L23/48 , H01L25/065 , H01L25/10
摘要: Donut-shaped Dynamic Random Access Memory (DRAM) includes a hole that fits around a processor, such that the DRAM and the processor are adjacent to one another on an Integrated Circuit (TC) package. In an embodiment, a heat spreader is mounted on top of the processor and covers a top of the DRAM without touching the DRAM.
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公开(公告)号:US10356902B2
公开(公告)日:2019-07-16
申请号:US14757984
申请日:2015-12-26
申请人: INTEL CORPORATION
发明人: Chee Ling Wong , Wil Choon Song , Khang Choong Yong , Eng Huat Goh , Mohd Muhaiyiddin Bin Abdullah , Tin Poay Chuah
摘要: A system for board-to-board interconnect is described herein. The system includes a first printed circuit board (PCB) having a first recess along a first edge of the first PCB that exposes a first solder pad on a layer of the first PCB. The system also includes a second PCB having a second recess along a second edge of the second PCB that exposes a second solder pad on a layer of the second PCB. The second recess is complementary to the first recess to allow the first PCB to mate with the second PCB. The first solder pad is aligned with the second solder pad when the first PCB is mated with the second PCB. The system additionally includes an assembly configured to electronically couple the first solder pad with the second solder pad.
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公开(公告)号:US20180145016A1
公开(公告)日:2018-05-24
申请号:US15355961
申请日:2016-11-18
申请人: Intel Corporation
IPC分类号: H01L23/498 , H01L23/538 , H01L21/48
CPC分类号: H01L23/49833 , H01L21/4853 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/5385 , H01L23/5386
摘要: Microelectronic devices having a multiple-component substrate assembly. A primary supports one or more integrated circuits, and an auxiliary substrate is coupled to, and makes electrical connections with, the primary substrate. The primary substrate will define a pinout for some or all contacts of the integrated circuit, and the auxiliary substrate will provide an additional pinout option. Different configurations of a single primary substrate may be adapted to different applications through use of different configurations of auxiliary substrates.
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公开(公告)号:US09960224B2
公开(公告)日:2018-05-01
申请号:US15282504
申请日:2016-09-30
申请人: Intel Corporation
发明人: Eng Huat Goh , Jiun Hann Sir , Han Kung Chua , Min Suet Lim , Hoay Tien Teoh
IPC分类号: H01L49/02
CPC分类号: H01L28/75
摘要: A three capacitor stack and associated methods are shown. An exemplary capacitor device may include a first capacitor stack that includes a first plurality of layers of reference electrodes interleaved with first capacitor electrodes, a second capacitor stack on the first capacitor stack that includes a second plurality of layers of reference electrodes interleaved with second capacitor electrodes, and a third capacitor stack on the second capacitor stack that includes a reference electrode and a third capacitor electrode. A respective layer of dielectric material is formed between the reference electrodes and the first capacitor electrodes, the second capacitor electrodes, and the third capacitor electrode.
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