- Patent Title: Device and method for forming resistive random access memory cell
-
Application No.: US15067268Application Date: 2016-03-11
-
Publication No.: US10262731B2Publication Date: 2019-04-16
- Inventor: Chih-Yang Chang , Wen-Ting Chu , Yu-Wei Ting , Chun-Yang Tsai , Kuo-Ching Huang
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
A device includes a first word line, a resistive random access memory (RRAM) cell, a second word line, and a charge pump circuit. The RRAM cell is coupled to the first word line and is not formed. The charge pump circuit is coupled to the second word line and is configured to provide a negative voltage. Methods of forming the device are also disclosed.
Public/Granted literature
- US20160196875A1 DEVICE AND METHOD FOR FORMING RESISTIVE RANDOM ACCESS MEMORY CELL Public/Granted day:2016-07-07
Information query
