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1.发明公开公开(公告)号：US20240224824A1
公开(公告)日：2024-07-04
申请号：US18304601
申请日：2023-04-21
Inventor： Hung-Ju Li , Yu-Wei Ting , Hui Hung Kuo , Chien Ta Huang , Kuo-Pin Chang , Kuo-Ching Huang
CPC classification number: H10N70/8413 , H10N70/011 , H10N70/231 , H10N70/823
Abstract: A device structure includes a heater line located over a substrate, an aluminum nitride layer having an inhomogeneous material composition, and a phase change material line. A top surface portion of the aluminum nitride layer has a higher atomic concentration of nitrogen than a bottom surface portion of the aluminum nitride layer contacting a top surface of the heater line. The PCM line includes a middle portion that overlies the heater line, a first end portion adjoined to a first side of the middle portion, and a second end portion adjoined to a second side of the middle portion.
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2.发明公开公开(公告)号：US20230403954A1
公开(公告)日：2023-12-14
申请号：US17836145
申请日：2022-06-09
Inventor： Kuo-Pin Chang , Yu-Wei Ting , Tsung-Hao Yeh , Kuo-Chyuan Tzeng , Kuo-Ching Huang
IPC: H01L45/00
CPC classification number: H01L45/126 , H01L45/06 , H01L45/1675 , H01L45/144 , H01L45/1226
Abstract: Phase change material (PCM) switches and methods of fabrication thereof that provide improved thermal confinement within a phase change material layer. A PCM switch may include a dielectric capping layer between a heater pad and the phase change material layer of the PCM switch that is laterally-confined such opposing sides of the dielectric capping layer the heater pad may form continuous surfaces extending transverse to the signal transmission pathway across the PCM switch. Heat transfer from the heater pad through the dielectric capping layer to the phase change material layer may be predominantly vertical, with minimal thermal dissipation along a lateral direction. The localized heating of the phase change material may improve the efficiency of the PCM switch enabling lower bias voltages, minimize the formation of regions of intermediate resistivity in the PCM switch, and improve the parasitic capacitance characteristics of the PCM switch.
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公开(公告)号：US09286973B2
公开(公告)日：2016-03-15
申请号：US14034717
申请日：2013-09-24
Inventor： Chih-Yang Chang , Wen-Ting Chu , Yu-Wei Ting , Chun-Yang Tsai , Kuo-Ching Huang
CPC classification number: G11C13/0021 , G11C13/0002 , G11C13/0038 , G11C13/0069 , G11C2013/0071 , G11C2013/0083 , G11C2213/79
Abstract: A device and method for forming resistive random access memory cell are provided. The method includes: providing a first voltage to a first word line connected to a first RRAM cell to form the first RRAM cell; and providing a negative voltage to a second word line connected to a second RRAM cell that shares a first source line and a first bit line with the first RRAM cell. An exemplary device includes: a first RRAM cell, a second RRAM cell, a first voltage source and a charge pump circuit. The first RRAM cell is connected to a first word line. The second RRAM cell is connected to a second word line. The first voltage source provides a first voltage to the first word line to form the first RRAM cell. The charge pump circuit provides a negative voltage to the second word line.
Abstract translation: 提供一种用于形成电阻随机存取存储单元的装置和方法。 该方法包括：向连接到第一RRAM单元的第一字线提供第一电压以形成第一RRAM单元; 以及向连接到与第一RRAM单元共享第一源极线和第一位线的第二RRAM单元的第二字线提供负电压。 示例性设备包括：第一RRAM单元，第二RRAM单元，第一电压源和电荷泵电路。 第一个RRAM单元连接到第一个字线。 第二RRAM单元连接到第二字线。 第一电压源向第一字线提供第一电压以形成第一RRAM单元。 电荷泵电路向第二字线提供负电压。
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4.发明申请公开(公告)号：US20240397837A1
公开(公告)日：2024-11-28
申请号：US18321081
申请日：2023-05-22
Inventor： Wei Ting Hsieh , Kuo-Ching Huang , Yu-Wei Ting , Chien Hung Liu , Kuo-Pin Chang , Hung-Ju Li
Abstract: An embodiment phase change material switch may include a first phase change material element, a second phase change material element, a first conductor electrically connected to a first end of each of the first phase change material element and the second phase change material element such that the first conductor is configured as a first terminal of an electrical circuit having a parallel configuration, a second conductor electrically connected to a second end of each of the first phase change material element and the second phase change material element such that the second conductor is configured as a second terminal of the electrical circuit having the parallel configuration, and a heating device coupled to the first phase change material element and to the second phase change material element and configured to supply a heat pulse to the first phase change material element and to the second phase change material element.
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公开(公告)号：US20230422517A1
公开(公告)日：2023-12-28
申请号：US17849755
申请日：2022-06-27
Inventor： Hung-Ju LI , Kuo-Pin Chang , Yu-Wei Ting , Yu-Sheng Chen , Ching-En Chen , Kuo-Ching Huang
IPC: H01L27/24
CPC classification number: H01L27/2427
Abstract: A selector structure may include a bottom electrode including a bottom low thermal conductivity (LTC) metal and a first bottom high thermal conductivity (HTC) metal, a first switching film on the bottom electrode and having an electrical resistivity switchable by an electric field, and a first top electrode on the first switching film and including a first top low thermal conductivity (LTC) metal and a first top high thermal conductivity (HTC) metal.
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Patent Agency Ranking
公开(公告)号：US10262731B2
公开(公告)日：2019-04-16
申请号：US15067268
申请日：2016-03-11
Inventor： Chih-Yang Chang , Wen-Ting Chu , Yu-Wei Ting , Chun-Yang Tsai , Kuo-Ching Huang
IPC: G11C13/00
Abstract: A device includes a first word line, a resistive random access memory (RRAM) cell, a second word line, and a charge pump circuit. The RRAM cell is coupled to the first word line and is not formed. The charge pump circuit is coupled to the second word line and is configured to provide a negative voltage. Methods of forming the device are also disclosed.
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7.发明授权RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltages 有权使用多个复位电压的RRAM阵列和使用多个复位电压复位RRAM阵列的方法公开(公告)号：US09361980B1
公开(公告)日：2016-06-07
申请号：US14620352
申请日：2015-02-12
Inventor： Chun-Yang Tsai , Hon-Jarn Lin , Kuo-Ching Huang , Yu-Wei Ting
CPC classification number: G11C13/0097 , G11C8/08 , G11C13/0028 , G11C13/0064 , G11C13/0069 , G11C2013/0066 , G11C2013/0071 , G11C2213/79 , G11C2213/82
Abstract: According to another embodiment, a method of reset operation for a resistive random access memory (RRAM) array, having a first RRAM connected to a first word line and a second RRAM connected to a second word line, is provided. A first electrical resistance between the first word line and a word line voltage source is lower than a second electrical resistance between the second word line and the word line voltage source. The method includes: providing a first voltage by using the word line voltage source for resetting the first RRAM; and providing a second voltage by using the word line voltage source for resetting the second RRAM, wherein the first voltage for resetting the first RRAM is lower than the second voltage for resetting the second RRAM.
Abstract translation: 根据另一实施例，提供一种具有连接到第一字线的第一RRAM和连接到第二字线的第二RRAM的电阻随机存取存储器（RRAM）阵列的复位操作的方法。 第一字线和字线电压源之间的第一电阻低于第二字线和字线电压源之间的第二电阻。 该方法包括：通过使用用于复位第一RRAM的字线电压源来提供第一电压; 以及通过使用用于复位第二RRAM的字线电压源来提供第二电压，其中用于复位第一RRAM的第一电压低于用于复位第二RRAM的第二电压。
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8.发明申请公开(公告)号：US20240397733A1
公开(公告)日：2024-11-28
申请号：US18321898
申请日：2023-05-23
Inventor： Wei Ting Hsieh , Kuo-Ching Huang , Yu-Wei Ting , Kuo-Pin Chang , Hung-Ju Li
Abstract: A device structure includes a first series connection of a first phase change memory (PCM) switch and a second PCM switch. The first PCM switch includes a first heater line, a first PCM line, and a first contact electrode and a second contact electrode located on the first heater line. The second PCM switch includes a second heater line, a second PCM line, and a third contact electrode and a fourth contact electrode located on the second heater line. The second contact electrode is electrically connected to the third contact electrode. The fourth contact electrode is electrically grounded. One of the first contact electrode and the second contact electrode includes an radio-frequency (RF) signal input port. Another of the first contact electrode and the second contact electrode comprises an RF signal output port. The device structure may function as a combination PCM switch that decreases noise level during signal transmission.
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9.发明申请公开(公告)号：US20240389487A1
公开(公告)日：2024-11-21
申请号：US18317268
申请日：2023-05-15
Inventor： Wei Ting Hsieh , Kuo-Ching Huang , Yu-Wei Ting , Ching-En Chen , Kuo-Pin Chang
IPC: H10N79/00
Abstract: A device structure includes semiconductor devices located on a substrate; metal interconnect structures located in dielectric material layers overlying the semiconductor devices; and a non-Ohmic voltage-triggered switch including a first switch electrode that is electrically connected to one of the semiconductor devices through a subset of the metal interconnect structures, a second switch electrode, and a non-Ohmic switching material portion providing a non-Ohmic current-voltage characteristics and in contact with the first switch electrode and the second switch electrode. The non-Ohmic voltage-triggered switch may be used as an electrostatic discharge (ESD) switch.
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公开(公告)号：US09576651B2
公开(公告)日：2017-02-21
申请号：US14601458
申请日：2015-01-21
Inventor： Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang , Chia-Fu Lee
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C13/0069 , G11C2013/0071 , G11C2213/52 , G11C2213/79
Abstract: According to one embodiment, a method of RRAM operations is provided. The method includes the following operations: providing a first voltage difference across a resistor of the RRAM during a read operation; and providing a second voltage difference across the resistor of the RRAM during a reset operation, wherein the first voltage difference has the same polarity as the second voltage difference.
Abstract translation: 根据一个实施例，提供了一种RRAM操作的方法。 该方法包括以下操作：在读操作期间在RRAM的电阻器两端提供第一电压差; 以及在复位操作期间在所述RRAM的电阻器两端提供第二电压差，其中所述第一电压差具有与所述第二电压差相同的极性。
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