Invention Grant
- Patent Title: Read and write control circuit and method of flash chip, and AMOLED application circuit
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Application No.: US15319885Application Date: 2016-03-24
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Publication No.: US10262741B2Publication Date: 2019-04-16
- Inventor: Hongjun Xie
- Applicant: Boe Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Calfee, Halter & Griswold LLP
- Priority: CN201510231355 20150508
- International Application: PCT/CN2016/077223 WO 20160324
- International Announcement: WO2016/180093 WO 20161117
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C5/14 ; G06F12/00 ; G11C16/10 ; G11C16/16 ; G11C16/20 ; G11C16/26 ; G11C16/32

Abstract:
A read and write control circuit for a flash chip is disclosed which includes a timing control circuit for generating a read and write timing signal for the flash chip, and a first non-volatile memory for storing a plurality of flags corresponding to a plurality of blocks in the flash chip, each of the flags indicating whether a respective one of the blocks that corresponds thereto has been written to normally. Also disclosed is a read and write control method of a flash chip, as well as an AMOLED application circuit having the read and write control circuit for use in an electrical compensation mechanism.
Public/Granted literature
- US20170148521A1 READ AND WRITE CONTROL CIRCUIT AND METHOD OF FLASH CHIP, AND AMOLED APPLICATION CIRCUIT Public/Granted day:2017-05-25
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