Invention Grant
- Patent Title: Stepped-width co-spiral inductor structure
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Application No.: US15288967Application Date: 2016-10-07
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Publication No.: US10262786B2Publication Date: 2019-04-16
- Inventor: Daeik Daniel Kim , Babak Nejati , Husnu Ahmet Masaracioglu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H03H7/01
- IPC: H03H7/01 ; H03H7/46 ; H01F17/00 ; H01F27/28 ; H01F41/04 ; H01L49/02 ; H01L23/498 ; H01L23/538 ; H01L23/522 ; H03H1/00

Abstract:
A stepped-width, co-spiral inductor structure includes a first exterior layer having a first exterior width. The stepped-width, co-spiral inductor structure also includes a first interior layer coupled to the first exterior layer. The first interior layer includes a first interior width that is wider than the first exterior width of the first exterior layer. The stepped-width, co-spiral inductor structure further includes a second exterior layer coupled to the first interior layer. The second exterior layer includes a second exterior width that is narrower than the first interior width of the first interior layer.
Public/Granted literature
- US20180033537A1 STEPPED-WIDTH CO-SPIRAL INDUCTOR STRUCTURE Public/Granted day:2018-02-01
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