Invention Grant
- Patent Title: Integrated photo detector, method of making the same
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Application No.: US15979046Application Date: 2018-05-14
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Publication No.: US10262983B2Publication Date: 2019-04-16
- Inventor: Jie Lin , Masaki Kato
- Applicant: INPHI CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INPHI CORPORATION
- Current Assignee: INPHI CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Ogawa P.C.
- Agent Richard T. Ogawa
- Main IPC: G02B6/12
- IPC: G02B6/12 ; H01L27/02 ; G02B6/42 ; H01L31/02 ; H01L31/0224 ; H01L27/144 ; H01L31/0232 ; H01L31/028 ; H01L31/103 ; H01L31/18

Abstract:
An integrated photo detector with enhanced electrostatic discharge damage (ESD) protection. The integrated photo detector includes a first photodiode formed in the SOI substrate and associated with a first p-electrode and a first n-electrode. Additionally, the integrated photo detector includes a second photodiode formed in the SOI substrate associated with a second p-electrode and a second n-electrode forming a capacitance no larger than a few femto Faradays. Moreover, the integrated photo detector includes a first electrode and a second electrode disposed respectively on the SOI substrate. The first/second electrode is respectively connected to the first p/n-electrode via a first/second metallic layer patterned with a reduced width from the first/second electrode to the first p/n-electrode and connected to the second p/n-electrode via a first/second metallic wire to make a parallel coupling between the first photodiode and the second photodiode with an ESD threshold of about 100V.
Public/Granted literature
- US20180261591A1 INTEGRATED PHOTO DETECTOR, METHOD OF MAKING THE SAME Public/Granted day:2018-09-13
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