- 专利标题： Multijunction photovoltaic device having SiGe(Sn) and (In)GaAsNBi cells
-
申请号： US14342061申请日： 2012-08-14
-
公开(公告)号： US10263129B2公开(公告)日： 2019-04-16
- 发明人: Andrew Johnson
- 申请人： Andrew Johnson
- 申请人地址： GB Cardiff
- 专利权人： IQE PLC
- 当前专利权人： IQE PLC
- 当前专利权人地址： GB Cardiff
- 代理机构： Jackson Walker LLP
- 代理商 Christopher J. Rourk; Thomas B. Hayes
- 国际申请： PCT/GB2012/051980 WO 20120814
- 国际公布： WO2013/030529 WO 20130307
- 主分类号： H01L31/02
- IPC分类号： H01L31/02 ; H01L29/16 ; H01L31/06 ; H01L31/0735 ; H01L31/0725 ; H01L31/074 ; H01L31/18 ; H01L31/0328 ; H01L31/0687 ; H01L31/0304 ; H01L31/0216 ; H01L29/20 ; H01L29/267 ; H01L31/068
摘要：
A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide bismide, or indium gallium nitride arsenide bismide, material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate. Preferably, further lattice matched subcells of gallium arsenide, indium gallium phosphide and aluminum gallium arsenide or aluminum indium gallium phosphide are provided.
公开/授权文献
信息查询
IPC分类:
