Invention Grant
- Patent Title: Matchless plasma source for semiconductor wafer fabrication
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Application No.: US15787660Application Date: 2017-10-18
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Publication No.: US10264663B1Publication Date: 2019-04-16
- Inventor: Maolin Long , Yuhou Wang , Ricky Marsh , Alex Paterson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Penilla IP, APC
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H05H1/46

Abstract:
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Public/Granted literature
- US20190116656A1 Matchless Plasma Source for Semiconductor Wafer Fabrication Public/Granted day:2019-04-18
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