SYSTEMS AND METHODS FOR REVERSE PULSING
    1.
    发明公开

    公开(公告)号:US20240030000A1

    公开(公告)日:2024-01-25

    申请号:US18480495

    申请日:2023-10-03

    IPC分类号: H01J37/32

    摘要: Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

    DUAL-FREQUENCY, DIRECT-DRIVE INDUCTIVELY COUPLED PLASMA SOURCE

    公开(公告)号:US20220199365A1

    公开(公告)日:2022-06-23

    申请号:US17606686

    申请日:2020-04-24

    IPC分类号: H01J37/32

    摘要: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

    Frequency tuning for a matchless plasma source

    公开(公告)号:US10672590B2

    公开(公告)日:2020-06-02

    申请号:US15921266

    申请日:2018-03-14

    IPC分类号: H01J37/32

    摘要: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

    Frequency Tuning for a Matchless Plasma Source

    公开(公告)号:US20190287764A1

    公开(公告)日:2019-09-19

    申请号:US15921266

    申请日:2018-03-14

    IPC分类号: H01J37/32

    摘要: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

    Matchless Plasma Source for Semiconductor Wafer Fabrication

    公开(公告)号:US20190116656A1

    公开(公告)日:2019-04-18

    申请号:US15787660

    申请日:2017-10-18

    IPC分类号: H05H1/46

    摘要: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

    SYSTEMS AND METHODS FOR TRANSFORMER COUPLED PLASMA PULSING WITH TRANSFORMER COUPLED CAPACITIVE TUNING SWITCHING

    公开(公告)号:US20180358205A1

    公开(公告)日:2018-12-13

    申请号:US15617366

    申请日:2017-06-08

    IPC分类号: H01J37/32 H03H7/38 H01L21/67

    摘要: A substrate processing system includes a processing chamber including a substrate support to support a substrate. A coil is arranged around the processing chamber. A first RF source provides first RF power at a first magnitude and a first frequency. A first pulsing circuit applies a duty cycle to the first RF source. A tuning circuit receives an output of the first pulsing circuit, includes a first variable capacitor, and has an output in communication with the coil to generate plasma in the processing chamber. A controller includes a data acquisition module to generate feedback. A feedback control module controls at least one of the first frequency and the first variable capacitor based on the feedback and a gain value. The controller selects the gain value based on at least one of the first frequency and the duty cycle.

    Systems And Methods For Reverse Pulsing
    8.
    发明申请
    Systems And Methods For Reverse Pulsing 有权
    反向脉冲的系统和方法

    公开(公告)号:US20170040174A1

    公开(公告)日:2017-02-09

    申请号:US14863331

    申请日:2015-09-23

    IPC分类号: H01L21/3065 H01L21/67

    摘要: Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

    摘要翻译: 描述了用于反向脉冲的系统和方法。 方法之一包括接收具有第一状态和第二状态的数字信号。 该方法还包括当数字信号处于第一状态时产生具有高状态的变压器耦合等离子体(TCP)射频(RF)脉冲信号,并且当数字信号处于第二状态时具有低状态。 该方法包括将TCP RF脉冲信号提供给等离子体室的一个或多个线圈,当数字信号处于第一状态时产生具有低状态的偏置RF脉冲信号,并且当数字信号处于 并且将偏压RF脉冲信号提供给等离子体室的卡盘。

    Systems for reverse pulsing
    9.
    发明授权

    公开(公告)号:US11798785B2

    公开(公告)日:2023-10-24

    申请号:US15701176

    申请日:2017-09-11

    摘要: Systems and methods for reverse pulsing are described. One of the systems includes a controller, first and second source radio frequency (RF) generators, and first and second bias RF generators. The controller controls the first source RF generator to generate a first source pulsed signal, and controls the second source RF generator to generate a second source pulsed signal. The system includes a first match circuit that receives the first and second source pulsed signals and combines the first and second source pulsed signals. The controller controls the first bias RF generator to generate a first bias pulsed signal, and controls the second bias RF generator to generate a second bias pulsed signal. The system includes a second match circuit that receives the first and second bias pulsed signals and combines the first and second bias pulsed signals into a combined bias signal.