- 专利标题： Semiconductor device substrate, semiconductor device wiring member and method for manufacturing them, and method for manufacturing semiconductor device using semiconductor device substrate
-
申请号： US15539481申请日： 2015-12-25
-
公开(公告)号： US10276422B2公开(公告)日： 2019-04-30
- 发明人: Satoshi Kubota
- 申请人： Ohkuchi Materials Co., Ltd.
- 申请人地址： JP Kagoshima
- 专利权人： Ohkuchi Materials Co., Ltd.
- 当前专利权人： Ohkuchi Materials Co., Ltd.
- 当前专利权人地址： JP Kagoshima
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2014-263553 20141225; JP2014-263554 20141225; JP2014-263555 20141225; JP2014-263556 20141225; JP2014-265373 20141226; JP2014-265374 20141226
- 国际申请： PCT/JP2015/086254 WO 20151225
- 国际公布： WO2016/104713 WO 20160630
- 主分类号： H01L21/683
- IPC分类号： H01L21/683 ; H01L23/12 ; H01L23/14 ; H01L23/29 ; H01L23/31 ; H01L23/50 ; H01L21/56 ; H01L23/495 ; H01L23/498 ; H01L23/00
摘要：
A semiconductor device substrate and wiring member including a first noble metal plating layer to become internal terminals is formed at predetermined sites on a metal plate, a metal plating layer is formed on the first noble metal plating layer as having a same shape as the first noble metal plating layer, a second noble metal plating layer to become external terminals is formed on a part of the metal plating layer, and a height of a surface of the second noble metal plating layer from a surface of the metal plate is larger than a height of a surface of the first noble metal plating layer from the surface of the metal plate.
公开/授权文献
信息查询
IPC分类:
