Invention Grant
- Patent Title: Method and system for providing a magnetic cell usable in spin transfer torque applications and including a switchable shunting layer
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Application No.: US15354934Application Date: 2016-11-17
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Publication No.: US10276555B2Publication Date: 2019-04-30
- Inventor: Sebastian Schafer
- Applicant: Samsung Electronics Co., LTD.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L29/82 ; H01L43/12 ; G11C11/16 ; H01L27/02 ; H01L27/22 ; H01L43/08 ; H01L45/00
Abstract:
A magnetic cell and method for providing the magnetic cell are described. A magnetic cell resides on a substrate and is usable in a magnetic device. The magnetic cell includes a magnetic junction and an ovonic threshold switch (OTS) layer. The magnetic junction has a plurality of sidewalls. The magnetic junction includes a free layer switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, a nonmagnetic spacer layer and a pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The OTS layer covers at least a portion of the plurality of sidewalls.
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