Invention Grant
- Patent Title: Cu—Ga binary alloy sputtering target and method of producing the same
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Application No.: US14435568Application Date: 2013-10-16
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Publication No.: US10283332B2Publication Date: 2019-05-07
- Inventor: Keita Umemoto , Shoubin Zhang
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J. DiCeglie, Jr.
- Priority: JP2012-229469 20121017; JP2013-208191 20131003
- International Application: PCT/JP2013/078067 WO 20131016
- International Announcement: WO2014/061697 WO 20140424
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C22C9/00 ; C22C1/04 ; B22F3/10 ; B22F3/14 ; B22F3/15 ; B22F3/24 ; C22C28/00

Abstract:
A Cu—Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu—Ga binary alloy phase is surrounded by a high-Ga-containing Cu—Ga binary alloy phase. The low-Ga-containing Cu—Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu—Ga binary alloy phase includes 28 atomic % or more of Ga.
Public/Granted literature
- US20150332901A1 Cu-Ga BINARY ALLOY SPUTTERING TARGET AND METHOD OF PRODUCING THE SAME Public/Granted day:2015-11-19
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