- 专利标题: Solid-state imaging element and imaging device
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申请号: US15746054申请日: 2016-10-14
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公开(公告)号: US10283544B2公开(公告)日: 2019-05-07
- 发明人: Yuhi Yorikado , Atsushi Toda , Susumu Inoue
- 申请人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 申请人地址: JP Kanagawa
- 专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Sheridan Ross P.C.
- 优先权: JP2015-236329 20151203
- 国际申请: PCT/JP2016/080501 WO 20161014
- 国际公布: WO2017/094362 WO 20170608
- 主分类号: H01L27/14
- IPC分类号: H01L27/14 ; H01L27/146 ; G02B3/00 ; H01L31/107 ; H04N5/374 ; H04N5/359 ; H01L31/0224 ; H01L31/0232
摘要:
To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion.A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.
公开/授权文献
- US20180211990A1 SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE 公开/授权日:2018-07-26
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