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公开(公告)号：US11799046B2
公开(公告)日：2023-10-24
申请号：US16875261
申请日：2020-05-15
发明人： Yuhi Yorikado , Atsushi Toda , Susumu Inoue
IPC分类号： H01L31/107 , G02B3/00 , H01L27/14 , H01L27/146 , H01L31/0224 , H01L31/0232 , H04N25/62 , H04N25/76 , H04N25/70 , H04N25/13
CPC分类号： H01L31/107 , G02B3/00 , H01L27/14 , H01L27/146 , H01L27/14603 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643 , H01L31/02327 , H01L31/022408 , H04N25/134 , H04N25/62 , H04N25/70 , H04N25/76 , G02B3/0056
摘要： To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.
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公开(公告)号：US10714521B2
公开(公告)日：2020-07-14
申请号：US16293384
申请日：2019-03-05
发明人： Yuhi Yorikado , Atsushi Toda , Susumu Inoue
IPC分类号： H01L27/14 , H01L27/146 , G02B3/00 , H01L31/107 , H04N5/374 , H01L31/0224 , H01L31/0232 , H04N5/359
摘要： To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.
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公开(公告)号：US10475831B2
公开(公告)日：2019-11-12
申请号：US15580817
申请日：2016-09-05
发明人： Susumu Inoue , Yuhi Yorikado , Atsushi Toda
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/107 , H01L31/0224 , H04N9/04 , H01L31/101 , H01L31/02 , H01L31/0216 , H01L21/02 , H01L31/18 , H01L31/028 , H01L31/0304
摘要： The present technology relates to a solid-state image sensing device for preventing a reduction in light receiving sensitivity of an avalanche photodiode, an electronic device, and a method for manufacturing the solid-state image sensing device. A solid-state image sensing device includes an avalanche photodiode having a first region of a first conductive type, a second region of a second conductive type different from the first conductive type, and an avalanche region sandwiched between the first region and the second region, which extend in a thickness direction of a semiconductor substrate, and a film formed on at least one side of the semiconductor substrate and including a metal oxide film, a metal nitride film, or a mix crystal-based film of metal oxide film and metal nitride film. The present technology can be applied to CMOS image sensors, for example.
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4.发明授权公开(公告)号：US09997552B2
公开(公告)日：2018-06-12
申请号：US15508561
申请日：2015-08-28
发明人： Susumu Inoue , Kentaro Akiyama , Junichiro Fujimagari , Keita Ishikawa , Jun Ogi , Yukio Tagawa , Takuya Nakamura , Satoru Wakiyama
IPC分类号： H01L31/0232 , H01L27/146 , H04N5/369
CPC分类号： H01L27/14618 , H01L27/14 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L2224/16225 , H01L2224/27013 , H01L2224/32225 , H01L2224/73204 , H04N5/369 , H01L2924/00
摘要： The present technology relates to a solid-state imaging device, an imaging apparatus, an electronic apparatus, and a semiconductor device, which can prevent overflow of an underfilling resin filled in a portion adapted to connect the substrate to the flip chip and can prevent secondary damages such as electric short-circuit and contact with processing equipment. By utilizing a molding technology of forming an on-chip lens, a dam is formed in a ring shape or a square shape in a manner surrounding a range where a flip chip is connected via a solder bump on an upper layer of a substrate of the solid-state imaging device and provided in order to form the on-chip lens. This can block the underfilling resin filled in the range where the substrate and the flip chip are electrically connected. The present technology can be applied to a solid-state imaging device.
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公开(公告)号：US10283544B2
公开(公告)日：2019-05-07
申请号：US15746054
申请日：2016-10-14
发明人： Yuhi Yorikado , Atsushi Toda , Susumu Inoue
IPC分类号： H01L27/14 , H01L27/146 , G02B3/00 , H01L31/107 , H04N5/374 , H04N5/359 , H01L31/0224 , H01L31/0232
摘要： To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion.A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.
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