- 专利标题: Radiation detector assembly
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申请号: US14985785申请日: 2015-12-31
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公开(公告)号: US10283557B2公开(公告)日: 2019-05-07
- 发明人: Biju Jacob , Habib Vafi , Brian David Yanoff , Jeffery Jon Shaw , Jianjun Guo
- 申请人: General Electric Company
- 申请人地址: US NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: US NY Schenectady
- 代理商 Ernest G. Cusick
- 主分类号: H01L27/00
- IPC分类号: H01L27/00 ; H01L27/146 ; G01T1/20 ; G01T1/24
摘要:
Various approaches are discussed for using four-side buttable CMOS tiles to fabricate detector panels, including large-area detector panels. Fabrication may utilize pads and interconnect structures formed on the top or bottom of the CMOS tiles. Electrical connection and readout may utilize readout and digitization circuitry provided on the CMOS tiles themselves such that readout of groups or sub-arrays of pixels occurs at the tile level, while tiles are then readout at the detector level such that readout operations are tiered or multi-level.
公开/授权文献
- US20170194375A1 RADIATION DETECTOR ASSEMBLY 公开/授权日:2017-07-06
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