Abstract:
A SiPM tile includes SiPM arrays on a detector die, each of the SiPM arrays including a first plurality of microcells and a second plurality of reference microcells dispersed on the die, each reference microcell including an optically-opaque mask, a readout circuit each including a respective charge sensitive amplifier (CSA) connected to one of the reference microcells, each CSA configured to accumulate the dark current of the reference microcell during a selected time window, a hybrid temperature control circuit configured to receive an output signal from each CSA, and to determine the real-time temperature of the die based on the received output signal, to provide the real-time temperature to a temperature compensation and correction control unit that adjusts a cooling/heating system flow provided to the die, the adjustment based on the real-time temperature. A method for compensating the operating temperature variation of the SiPM tile is also disclosed.
Abstract:
The present approach relates to the use of reference pixels provided between the primary pixels of a detector panel. Coincidence circuitry or logic may be employed so that the measured signal arising from the same X-ray event may be properly, that is the signal measured at both a reference and primary pixel may be combined so as to provide an accurate estimate of the measured signal, at an appropriate location on the detector panel.
Abstract:
Some embodiments are associated with an input signal comprising a first and a second photon event incident on a photon-counting semiconductor detector. A relatively slow charge collection shaping amplifier may receive the input signal and output an indication of a total amount of energy associated with the superposition of the first and second events. A relatively fast charge collection shaping amplifier may receive the input signal and output an indication that is used to allocate a first portion of the total amount of energy to the first event and a second portion of the total amount of energy to the second event.
Abstract:
The present approach relates to a detector design that allows detector-based wobble using an electronic control scheme. In one implementation, each detector pixel is divided into sub-pixels. The readout of the sub-pixels can be binned with minimal noise penalty to enable the detector wobble without physically shifting the detector or alternating the physical focal spot location, though, as discussed herein alternation of the focal spot location may be used in conjunction with the present approach to further improve radial and longitudinal imaging resolution as well as suppressing artifacts resulted by limited spatial sampling.
Abstract:
A compensating current is applied at one or more points in a signal processing path to compensate for one or both of a dark or offset current present in an input signal. In certain implementations, the dark or offset current is present in a signal generated by a photomultiplier device. The dark or offset current may be monitored in an output of the signal processing path and, the monitoring being used to determine how much compensation is needed in the signal processing path and to allocate where in the signal processing path the compensation current will be applied.
Abstract:
A silicon photomultiplier array including a plurality of microcells arranged in subgroupings, each microcell of a respective subgrouping providing a pulse output in response to an incident radiation. Each microcell output interconnected by respective traces of equal length to either a summing node or an integrated buffer amplifier. Each respective summing node configured to sum the pulse outputs of a first subgroup of the microcell subgroupings, and each respective integrated buffer amplifier configured to sum the pulse outputs of each microcell of a second subgrouping, the respective integrated buffer amplifier located on the silicon photomultiplier array within the second subgroup of microcells. The plurality of microcells arranged in one of columns and rows, and a first group of the arranged plurality of microcells being a mirror image of a second group of the arranged plurality of microcells about a midpoint between one of the columns and rows.
Abstract:
Various approaches are discussed for using four-side buttable CMOS tiles to fabricate detector panels, including large-area detector panels. Fabrication may utilize pads and interconnect structures formed on the top or bottom of the CMOS tiles. Electrical connection and readout may utilize readout and digitization circuitry provided on the CMOS tiles themselves such that readout of groups or sub-arrays of pixels occurs at the tile level, while tiles are then readout at the detector level such that readout operations are tiered or multi-level.
Abstract:
A photon detector having an optical transparent plate and photodiode array interconnected by an optical light guide array. The optical light guide array including elements providing a transmission line between the optical transparent plate and the photodiode array, where the position of one or more optical light guide elements is formed to adjust for a miss-registered photodiode individual element. A method for assembling the photon detector includes depositing a non-wetting film on opposing surfaces of the optical transparent plate and/or photodiode array, altering the deposited non-wetting film in regions of individual photodiode elements, dispensing an optical coupler adhesive on the optical transparent plate and photodiode array to form adhesive beads, aligning the opposing surfaces, assembling the opposing surfaces so that the corresponding optical coupler adhesive beads contact each other, and curing the optical coupler adhesive to form a structurally merged photon detector having optical light guide elements.
Abstract:
A silicon photomultiplier array including a plurality of microcells arranged in subgroupings, each microcell of a respective subgrouping providing a pulse output in response to an incident radiation. Each microcell output interconnected by respective traces of equal length to either a summing node or an integrated buffer amplifier. Each respective summing node configured to sum the pulse outputs of a first subgroup of the microcell subgroupings, and each respective integrated buffer amplifier configured to sum the pulse outputs of each microcell of a second subgrouping, the respective integrated buffer amplifier located on the silicon photomultiplier array within the second subgroup of microcells. The plurality of microcells arranged in one of columns and rows, and a first group of the arranged plurality of microcells being a mirror image of a second group of the arranged plurality of microcells about a midpoint between one of the columns and rows.
Abstract:
A digital X-ray detector is provided. The digital X-ray detector includes multiple pixels, each pixel including a pinned photodiode, and multiple readout channels coupled to each pinned photodiode, wherein each readout channel includes at least one charge-storage capacitor, an amplifier, and a transfer gate. The digital X-ray detector also includes control circuitry coupled to each pixel of the multiple pixels and configured to selectively control a flow of photocharge generated by each pinned photodiode to a respective at least one charge-storage capacitor of each respective readout channel via control of each respective transfer gate of each respective readout channel.