Temperature compensation for silicon photomultiplier based detector

    公开(公告)号:US10564299B2

    公开(公告)日:2020-02-18

    申请号:US15145380

    申请日:2016-05-03

    Inventor: Geng Fu Jianjun Guo

    Abstract: A SiPM tile includes SiPM arrays on a detector die, each of the SiPM arrays including a first plurality of microcells and a second plurality of reference microcells dispersed on the die, each reference microcell including an optically-opaque mask, a readout circuit each including a respective charge sensitive amplifier (CSA) connected to one of the reference microcells, each CSA configured to accumulate the dark current of the reference microcell during a selected time window, a hybrid temperature control circuit configured to receive an output signal from each CSA, and to determine the real-time temperature of the die based on the received output signal, to provide the real-time temperature to a temperature compensation and correction control unit that adjusts a cooling/heating system flow provided to the die, the adjustment based on the real-time temperature. A method for compensating the operating temperature variation of the SiPM tile is also disclosed.

    Detector system and module for compensating dark current
    5.
    发明授权
    Detector system and module for compensating dark current 有权
    用于补偿暗电流的检测器系统和模块

    公开(公告)号:US09407843B2

    公开(公告)日:2016-08-02

    申请号:US14061557

    申请日:2013-10-23

    Abstract: A compensating current is applied at one or more points in a signal processing path to compensate for one or both of a dark or offset current present in an input signal. In certain implementations, the dark or offset current is present in a signal generated by a photomultiplier device. The dark or offset current may be monitored in an output of the signal processing path and, the monitoring being used to determine how much compensation is needed in the signal processing path and to allocate where in the signal processing path the compensation current will be applied.

    Abstract translation: 在信号处理路径中的一个或多个点处施加补偿电流以补偿输入信号中存在的暗或偏移电流中的一个或两个。 在某些实施方案中,暗或偏移电流存在于由光电倍增器装置产生的信号中。 可以在信号处理路径的输出中监视暗或偏移电流,并且监视用于确定在信号处理路径中需要多少补偿并且在信号处理路径中分配补偿电流将被施加的位置。

    SYSTEMS AND METHODS FOR MIMIMIZING SILICON PHOTOMULTIPLIER SIGNAL PROPAGATION DELAY DISPERSION AND IMPROVE TIMING
    6.
    发明申请
    SYSTEMS AND METHODS FOR MIMIMIZING SILICON PHOTOMULTIPLIER SIGNAL PROPAGATION DELAY DISPERSION AND IMPROVE TIMING 有权
    用于减少硅光电子信号传播延迟分散和改进时序的系统和方法

    公开(公告)号:US20160191829A1

    公开(公告)日:2016-06-30

    申请号:US14609193

    申请日:2015-01-29

    CPC classification number: G01T1/248 G01T1/2018 G01T1/208

    Abstract: A silicon photomultiplier array including a plurality of microcells arranged in subgroupings, each microcell of a respective subgrouping providing a pulse output in response to an incident radiation. Each microcell output interconnected by respective traces of equal length to either a summing node or an integrated buffer amplifier. Each respective summing node configured to sum the pulse outputs of a first subgroup of the microcell subgroupings, and each respective integrated buffer amplifier configured to sum the pulse outputs of each microcell of a second subgrouping, the respective integrated buffer amplifier located on the silicon photomultiplier array within the second subgroup of microcells. The plurality of microcells arranged in one of columns and rows, and a first group of the arranged plurality of microcells being a mirror image of a second group of the arranged plurality of microcells about a midpoint between one of the columns and rows.

    Abstract translation: 一种硅光电倍增管阵列,其包括以子组排列的多个微单元,相应子组的每个微单元响应入射辐射提供脉冲输出。 每个微小区输出通过相等长度的相应迹线互相互相耦合到求和节点或集成缓冲放大器。 每个各个求和节点被配置为对微小区子组的第一子组的脉冲输出和每个相应的集成缓冲放大器进行求和,所述每个集成缓冲放大器被配置为对位于硅光电倍增管阵列上的第二子组的每个微小区的脉冲输出进行求和 在微细胞的第二亚组内。 布置在列和行之一中的多个微单元,并且布置的多个微单元中的第一组是排列的多个微单元的第二组的镜像,围绕其中一列和列之间的中点。

    Radiation detector assembly
    7.
    发明授权

    公开(公告)号:US10686003B2

    公开(公告)日:2020-06-16

    申请号:US14985739

    申请日:2015-12-31

    Abstract: Various approaches are discussed for using four-side buttable CMOS tiles to fabricate detector panels, including large-area detector panels. Fabrication may utilize pads and interconnect structures formed on the top or bottom of the CMOS tiles. Electrical connection and readout may utilize readout and digitization circuitry provided on the CMOS tiles themselves such that readout of groups or sub-arrays of pixels occurs at the tile level, while tiles are then readout at the detector level such that readout operations are tiered or multi-level.

    Light guide array for pet detector fabrication methods and apparatus

    公开(公告)号:US09753151B2

    公开(公告)日:2017-09-05

    申请号:US14815107

    申请日:2015-07-31

    Abstract: A photon detector having an optical transparent plate and photodiode array interconnected by an optical light guide array. The optical light guide array including elements providing a transmission line between the optical transparent plate and the photodiode array, where the position of one or more optical light guide elements is formed to adjust for a miss-registered photodiode individual element. A method for assembling the photon detector includes depositing a non-wetting film on opposing surfaces of the optical transparent plate and/or photodiode array, altering the deposited non-wetting film in regions of individual photodiode elements, dispensing an optical coupler adhesive on the optical transparent plate and photodiode array to form adhesive beads, aligning the opposing surfaces, assembling the opposing surfaces so that the corresponding optical coupler adhesive beads contact each other, and curing the optical coupler adhesive to form a structurally merged photon detector having optical light guide elements.

    Systems and methods for minimizing silicon photomultiplier signal propagation delay dispersion and improve timing

    公开(公告)号:US09720109B2

    公开(公告)日:2017-08-01

    申请号:US14609193

    申请日:2015-01-29

    CPC classification number: G01T1/248 G01T1/2018 G01T1/208

    Abstract: A silicon photomultiplier array including a plurality of microcells arranged in subgroupings, each microcell of a respective subgrouping providing a pulse output in response to an incident radiation. Each microcell output interconnected by respective traces of equal length to either a summing node or an integrated buffer amplifier. Each respective summing node configured to sum the pulse outputs of a first subgroup of the microcell subgroupings, and each respective integrated buffer amplifier configured to sum the pulse outputs of each microcell of a second subgrouping, the respective integrated buffer amplifier located on the silicon photomultiplier array within the second subgroup of microcells. The plurality of microcells arranged in one of columns and rows, and a first group of the arranged plurality of microcells being a mirror image of a second group of the arranged plurality of microcells about a midpoint between one of the columns and rows.

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