Manufacturing techniques and related semiconductor devices are disclosed in which the channel region of analog transistors and/or transistors operated at higher supply voltages may be formed on the basis of a very thin semiconductor layer in an SOI configuration by incorporating a counter-doped region into the channel region at the source side of the transistor. The counter-doped region may be inserted prior to forming the gate electrode structure. With this asymmetric dopant profile in the channel region, superior transistor performance may be obtained, thereby obtaining a performance gain for transistors formed on the basis of a thin semiconductor base material required for the formation of sophisticated fully depleted transistor elements.