公开(公告)号：US10283642B1

公开(公告)日：2019-05-07

申请号：US15957072

申请日：2018-04-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Alban Zaka ,  Ignasi Cortes Mayol ,  Tom Herrmann ,  El Mehdi Bazizi ,  Luca Pirro

IPC: H01L29/786 ,  H01L29/08

Abstract: Manufacturing techniques and related semiconductor devices are disclosed in which the channel region of analog transistors and/or transistors operated at higher supply voltages may be formed on the basis of a very thin semiconductor layer in an SOI configuration by incorporating a counter-doped region into the channel region at the source side of the transistor. The counter-doped region may be inserted prior to forming the gate electrode structure. With this asymmetric dopant profile in the channel region, superior transistor performance may be obtained, thereby obtaining a performance gain for transistors formed on the basis of a thin semiconductor base material required for the formation of sophisticated fully depleted transistor elements.

公开(公告)号：US20210043733A1

公开(公告)日：2021-02-11

申请号：US16535338

申请日：2019-08-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lars Mueller-Meskamp ,  Luca Pirro

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/423

Abstract: One illustrative device disclosed herein includes a gate structure positioned above an active semiconductor layer of an SOI substrate and a counter-doped back-gate region positioned in the doped base semiconductor substrate of the SOI substrate. In this particular embodiment, the device also includes a counter-doped back-gate contact region positioned in the base semiconductor substrate, wherein the counter-doped back-gate region and the counter-doped back-gate contact region are doped with a dopant type that is opposite the dopant type in the base semiconductor substrate. In this illustrative example, the counter-doped back-gate region and the counter-doped back-gate contact region are laterally separated from one another by a portion of the doped base semiconductor substrate. The device also includes a conductive back-gate contact structure that is conductively coupled to the counter-doped back-gate contact region.