- Patent Title: Plasma etching method, pattern forming method and cleaning method
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Application No.: US15090971Application Date: 2016-04-05
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Publication No.: US10290510B2Publication Date: 2019-05-14
- Inventor: Shunichi Mikami
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2015-081019 20150410
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3065 ; H01L21/3213 ; H01L21/311 ; H01C17/00 ; H01C17/24
Abstract:
A plasma etching method is performed by forming a desired pattern of a mask into a film including a zirconium oxide film by plasma etching with plasma generated from a first gas. The first gas consists of at least one chloride-containing gas of the group of boron trichloride, tetrachloromethane, chloride and silicon tetrachloride, at least one hydrogen-containing gas of the group of hydrogen bromide, hydrogen and methane, and a noble gas. An underlying film of a silicon oxide film or an amorphous carbon film is provided underneath the zirconium oxide film, and an etching selectivity of the zirconium oxide film to the underlying film is greater than or equal to one.
Public/Granted literature
- US20160300728A1 PLASMA ETCHING METHOD, PATTERN FORMING METHOD AND CLEANING METHOD Public/Granted day:2016-10-13
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