Invention Grant
- Patent Title: Flash memory devices incorporating a polydielectric layer
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Application No.: US15721771Application Date: 2017-09-30
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Publication No.: US10290642B2Publication Date: 2019-05-14
- Inventor: Haitao Liu , Guangyu Huang , Krishna K. Parat , Shrotri B. Kunal , Srikant Jayanti
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Thorpe North & Western, LLP
- Agent David W. Osborne
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/11524 ; H01L27/1157 ; H01L27/11556 ; H01L29/51 ; H01L27/11582 ; G11C11/56
Abstract:
Flash memory technology is disclosed. In one example, a flash memory cell can include a charge storage structure, a control gate laterally separated from the charge storage structure, and at least four dielectric layers disposed between the control gate and the charge storage structure. Associated systems and methods are also disclosed.
Public/Granted literature
- US20190103411A1 FLASH MEMORY DEVICES INCORPORATING A POLYDIELECTRIC LAYER Public/Granted day:2019-04-04
Information query
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