- 专利标题: Metal oxide film formation method
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申请号: US15736351申请日: 2015-06-18
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公开(公告)号: US10290762B2公开(公告)日: 2019-05-14
- 发明人: Takahiro Hiramatsu , Hiroyuki Orita , Toshiyuki Kawaharamura , Shizuo Fujita , Takayuki Uchida
- 申请人: Toshiba Mitsubishi-Electric Industrial Systems Corporation , Kochi Prefectural Public University Corporation , Kyoto University
- 申请人地址: JP Chuo-ku JP Kochi-shi JP Kyoto-shi
- 专利权人: Toshiba Mitsubishi-Electric Industrial Systems Corporation,Kochi Prefectural Public University Corporation,Kyoto University
- 当前专利权人: Toshiba Mitsubishi-Electric Industrial Systems Corporation,Kochi Prefectural Public University Corporation,Kyoto University
- 当前专利权人地址: JP Chuo-ku JP Kochi-shi JP Kyoto-shi
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 国际申请: PCT/JP2015/067536 WO 20150618
- 国际公布: WO2016/203595 WO 20161222
- 主分类号: G01R31/26
- IPC分类号: G01R31/26 ; H01L21/66 ; H01L31/18 ; C23C16/40 ; C23C16/455 ; H01L31/0216 ; C23C16/448
摘要:
Disclosed herein in a method of forming a metal oxide film, which can provide a high-quality metal oxide film while enhancing production efficiency. The method includes the steps of: turning a raw-material solution having a metallic element into a mist, to obtain a raw-material solution mist; turning a reaction aiding solution into a mist, to obtain an aiding-agent mist; feeding the raw-material solution mist and the aiding-agent mist into a mixing vessel, thereby mixing the raw-material solution mist and the aiding-agent mist, to obtain a mixed mist; and feeding the mixed mist onto a back surface of a substrate which is heated, to obtain a metal oxide film.
公开/授权文献
- US20180190859A1 METAL OXIDE FILM FORMATION METHOD 公开/授权日:2018-07-05
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