Invention Grant
- Patent Title: Three-dimensional devices with wedge-shaped contact region and method of making thereof
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Application No.: US15367791Application Date: 2016-12-02
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Publication No.: US10290803B2Publication Date: 2019-05-14
- Inventor: Michiaki Sano , Zhen Chen , Tetsuya Yamada , Akira Nakada , Yasuke Oda , Manabu Hayashi , Shigenori Sato
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/24 ; H01L45/00 ; H01L27/11582 ; H01L27/11565 ; H01L27/11575

Abstract:
A wedge-shaped contact region can be employed to provide electrical contacts to multiple electrically conductive layers in a three-dimensional device structure. A cavity including a generally wedge-shaped region and a primary region is formed in a dielectric matrix layer over a support structure. An alternating stack of insulating layers and electrically conductive layers is formed by a series of conformal deposition processes in the cavity and over the dielectric matrix layer. The alternating stack can be planarized employing the top surface of the dielectric matrix layer as a stopping layer. A tip portion of each electrically conductive layer within remaining portions of the alternating stack is laterally offset from the tip of the generally wedge-shaped region by a respective lateral offset distance along a lateral protrusion direction. Contact via structures can be formed on the tip portions of the electrically conductive layers to provide electrical contact.
Public/Granted literature
- US20180158873A1 THREE-DIMENSIONAL DEVICES WITH WEDGE-SHAPED CONTACT REGION AND METHOD OF MAKING THEREOF Public/Granted day:2018-06-07
Information query
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