Invention Grant
- Patent Title: System and method for biasing an RF circuit
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Application No.: US15728264Application Date: 2017-10-09
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Publication No.: US10291194B2Publication Date: 2019-05-14
- Inventor: Nikolay Ilkov , Andreas Baenisch , Peter Pfann , Hans-Dieter Wohlmuth
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H03G3/30
- IPC: H03G3/30 ; H03F1/02 ; H03F1/22 ; H03F1/56 ; H03F3/193 ; H03F3/45 ; H03B5/12

Abstract:
In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.
Public/Granted literature
- US20190109574A1 System and Method for Biasing an RF Circuit Public/Granted day:2019-04-11
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